Step-necking growth of silicon nanowire channels for high performance field effect transistors

Abstract Ultrathin silicon nanowires (diameter <30 nm) with strong electrostatic control are ideal quasi-1D channel materials for high-performance field effect transistors, while a short channel is desirable to enhance driving current. Typically, the patterning of such delicate channels relies on...

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Bibliographic Details
Main Authors: Lei Wu, Zhiyan Hu, Lei Liang, Ruijin Hu, Junzhuan Wang, Linwei Yu
Format: Article
Language:English
Published: Nature Portfolio 2025-01-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-025-56376-x
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