Effects of the Argon Pressure on the Optical Band Gap of Zinc Oxide Thin Films Grown by Nonreactive RF Sputtering
Zinc oxide (ZnO) thin films were grown by nonreactive RF sputtering at room temperature under varying argon pressures (PAr). Their optical band gap was found to increase from 3.58 to 4.34 eV when the argon pressure increases from 2.67 to 10.66 Pa. After annealing at 200°C and 500°C, optical band gap...
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| Format: | Article |
| Language: | English |
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Wiley
2013-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2013/970976 |
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| author | M. Acosta I. Riech E. Martín-Tovar |
| author_facet | M. Acosta I. Riech E. Martín-Tovar |
| author_sort | M. Acosta |
| collection | DOAJ |
| description | Zinc oxide (ZnO) thin films were grown by nonreactive RF sputtering at room temperature under varying argon pressures (PAr). Their optical band gap was found to increase from 3.58 to 4.34 eV when the argon pressure increases from 2.67 to 10.66 Pa. After annealing at 200°C and 500°C, optical band gaps decrease considerably. The observed widening of the band gap with increasing PAr can be understood as being a consequence of the poorer crystallinity of films grown at higher pressures. Measurements of morphological and electrical properties of these films correlate well with this picture. Our main aim is to understand the effects of PAr on several physical properties of the films, and most importantly on its optical band gap. |
| format | Article |
| id | doaj-art-b37ed9b6d9994682a0adaed43d92e2a4 |
| institution | Kabale University |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2013-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-b37ed9b6d9994682a0adaed43d92e2a42025-02-03T01:09:30ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242013-01-01201310.1155/2013/970976970976Effects of the Argon Pressure on the Optical Band Gap of Zinc Oxide Thin Films Grown by Nonreactive RF SputteringM. Acosta0I. Riech1E. Martín-Tovar2Materials Science Laboratory, Faculty of Engineering, Yucatan University, Avenida Industrias No Contaminantes S/N, A.P. 150, Cordemex, 97000 Mérida, Yuc, MexicoMaterials Science Laboratory, Faculty of Engineering, Yucatan University, Avenida Industrias No Contaminantes S/N, A.P. 150, Cordemex, 97000 Mérida, Yuc, MexicoMaterials Science Laboratory, Faculty of Engineering, Yucatan University, Avenida Industrias No Contaminantes S/N, A.P. 150, Cordemex, 97000 Mérida, Yuc, MexicoZinc oxide (ZnO) thin films were grown by nonreactive RF sputtering at room temperature under varying argon pressures (PAr). Their optical band gap was found to increase from 3.58 to 4.34 eV when the argon pressure increases from 2.67 to 10.66 Pa. After annealing at 200°C and 500°C, optical band gaps decrease considerably. The observed widening of the band gap with increasing PAr can be understood as being a consequence of the poorer crystallinity of films grown at higher pressures. Measurements of morphological and electrical properties of these films correlate well with this picture. Our main aim is to understand the effects of PAr on several physical properties of the films, and most importantly on its optical band gap.http://dx.doi.org/10.1155/2013/970976 |
| spellingShingle | M. Acosta I. Riech E. Martín-Tovar Effects of the Argon Pressure on the Optical Band Gap of Zinc Oxide Thin Films Grown by Nonreactive RF Sputtering Advances in Condensed Matter Physics |
| title | Effects of the Argon Pressure on the Optical Band Gap of Zinc Oxide Thin Films Grown by Nonreactive RF Sputtering |
| title_full | Effects of the Argon Pressure on the Optical Band Gap of Zinc Oxide Thin Films Grown by Nonreactive RF Sputtering |
| title_fullStr | Effects of the Argon Pressure on the Optical Band Gap of Zinc Oxide Thin Films Grown by Nonreactive RF Sputtering |
| title_full_unstemmed | Effects of the Argon Pressure on the Optical Band Gap of Zinc Oxide Thin Films Grown by Nonreactive RF Sputtering |
| title_short | Effects of the Argon Pressure on the Optical Band Gap of Zinc Oxide Thin Films Grown by Nonreactive RF Sputtering |
| title_sort | effects of the argon pressure on the optical band gap of zinc oxide thin films grown by nonreactive rf sputtering |
| url | http://dx.doi.org/10.1155/2013/970976 |
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