High Mobility, High Carrier Density SnSe2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching

High Mobility, High Carrier Density SnSe2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching

Abstract 2D and layered semiconductors are considered as promising electronic materials, particularly for applications that require high carrier mobility and efficient field‐effect switching combined with mechanical flexibility. To date, however, the highest mobility has been realized primarily at l...

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Bibliographic Details
Main Authors: Yuan Huang, Eli Sutter, Bruce A. Parkinson, Peter Sutter
Format: Article
Language:English
Published: Wiley-VCH 2025-05-01
Series:Advanced Electronic Materials
Subjects:
high carrier mobility
layered semiconductors
negative photoconductance
on‐off current ratio
solution gating
subthreshold swing
Online Access:https://doi.org/10.1002/aelm.202400691
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https://doi.org/10.1002/aelm.202400691

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