Enhanced Performance of High-Power InAs/GaAs Quantum Dot Lasers Through Indium Flushing
InAs/GaAs quantum dots (QDs) appear promising for optoelectronic applications. However, the inhomogeneous broadening caused by natural strain and the non-uniform size distribution deteriorates the device performance based on multi-stacked QD layers. In this study, In-flush was incorporated during th...
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| Format: | Article |
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MDPI AG
2025-01-01
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| Series: | Photonics |
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| Online Access: | https://www.mdpi.com/2304-6732/12/1/62 |
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| author | Deyan Dai Hanqing Liu Xiangjun Shang Shizhuo Tan Qiaozhi Zhang Chengao Yang Dongwei Jiang Xiangbin Su Haiqiao Ni Zhichuan Niu |
| author_facet | Deyan Dai Hanqing Liu Xiangjun Shang Shizhuo Tan Qiaozhi Zhang Chengao Yang Dongwei Jiang Xiangbin Su Haiqiao Ni Zhichuan Niu |
| author_sort | Deyan Dai |
| collection | DOAJ |
| description | InAs/GaAs quantum dots (QDs) appear promising for optoelectronic applications. However, the inhomogeneous broadening caused by natural strain and the non-uniform size distribution deteriorates the device performance based on multi-stacked QD layers. In this study, In-flush was incorporated during the epitaxy, and the photoluminescence (PL) linewidth was significantly narrowed to 26.1 meV for the flushed sample and maintained to 27.3 meV for the unflushed sample. The flushed sample shows better device performance in threshold current (0.229 to 0.334 A at 15 °C), power (1.142 to 1.113 W at 15 °C), and characteristic temperature (51 to 39 K in the range of 55~80 °C) compared with the unflushed sample. |
| format | Article |
| id | doaj-art-b147125403604f54b16dedae7c3a07ba |
| institution | Kabale University |
| issn | 2304-6732 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Photonics |
| spelling | doaj-art-b147125403604f54b16dedae7c3a07ba2025-01-24T13:46:22ZengMDPI AGPhotonics2304-67322025-01-011216210.3390/photonics12010062Enhanced Performance of High-Power InAs/GaAs Quantum Dot Lasers Through Indium FlushingDeyan Dai0Hanqing Liu1Xiangjun Shang2Shizhuo Tan3Qiaozhi Zhang4Chengao Yang5Dongwei Jiang6Xiangbin Su7Haiqiao Ni8Zhichuan Niu9Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaInAs/GaAs quantum dots (QDs) appear promising for optoelectronic applications. However, the inhomogeneous broadening caused by natural strain and the non-uniform size distribution deteriorates the device performance based on multi-stacked QD layers. In this study, In-flush was incorporated during the epitaxy, and the photoluminescence (PL) linewidth was significantly narrowed to 26.1 meV for the flushed sample and maintained to 27.3 meV for the unflushed sample. The flushed sample shows better device performance in threshold current (0.229 to 0.334 A at 15 °C), power (1.142 to 1.113 W at 15 °C), and characteristic temperature (51 to 39 K in the range of 55~80 °C) compared with the unflushed sample.https://www.mdpi.com/2304-6732/12/1/62InAs/GaAs quantum dotsindium flushingmolecular beam epitaxy |
| spellingShingle | Deyan Dai Hanqing Liu Xiangjun Shang Shizhuo Tan Qiaozhi Zhang Chengao Yang Dongwei Jiang Xiangbin Su Haiqiao Ni Zhichuan Niu Enhanced Performance of High-Power InAs/GaAs Quantum Dot Lasers Through Indium Flushing Photonics InAs/GaAs quantum dots indium flushing molecular beam epitaxy |
| title | Enhanced Performance of High-Power InAs/GaAs Quantum Dot Lasers Through Indium Flushing |
| title_full | Enhanced Performance of High-Power InAs/GaAs Quantum Dot Lasers Through Indium Flushing |
| title_fullStr | Enhanced Performance of High-Power InAs/GaAs Quantum Dot Lasers Through Indium Flushing |
| title_full_unstemmed | Enhanced Performance of High-Power InAs/GaAs Quantum Dot Lasers Through Indium Flushing |
| title_short | Enhanced Performance of High-Power InAs/GaAs Quantum Dot Lasers Through Indium Flushing |
| title_sort | enhanced performance of high power inas gaas quantum dot lasers through indium flushing |
| topic | InAs/GaAs quantum dots indium flushing molecular beam epitaxy |
| url | https://www.mdpi.com/2304-6732/12/1/62 |
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