Enhanced Performance of High-Power InAs/GaAs Quantum Dot Lasers Through Indium Flushing

Enhanced Performance of High-Power InAs/GaAs Quantum Dot Lasers Through Indium Flushing

InAs/GaAs quantum dots (QDs) appear promising for optoelectronic applications. However, the inhomogeneous broadening caused by natural strain and the non-uniform size distribution deteriorates the device performance based on multi-stacked QD layers. In this study, In-flush was incorporated during th...

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Bibliographic Details
Main Authors: Deyan Dai, Hanqing Liu, Xiangjun Shang, Shizhuo Tan, Qiaozhi Zhang, Chengao Yang, Dongwei Jiang, Xiangbin Su, Haiqiao Ni, Zhichuan Niu
Format: Article
Language:English
Published: MDPI AG 2025-01-01
Series:Photonics
Subjects:
InAs/GaAs quantum dots
indium flushing
molecular beam epitaxy
Online Access:https://www.mdpi.com/2304-6732/12/1/62
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