Process-Dependent Evolution of Channel Stress and Stress-Induced Mobility Gain in FinFET, Normal GAAFET, and Si/SiGe Hybrid Channel GAAFET
This study investigates the evolution of stress and its induced carrier mobility gain in FinFET, GAAFET, and Si/SiGe hybrid channel GAAFET throughout the process flow using technology computer-aided design (TCAD) tool, which has been calibrated with experimental data from the transmission electron m...
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IEEE
2025-01-01
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| Online Access: | https://ieeexplore.ieee.org/document/10854214/ |
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| author | Chiang Zhu Xiaona Zhu Shaofeng Yu David Wei Zhang |
| author_facet | Chiang Zhu Xiaona Zhu Shaofeng Yu David Wei Zhang |
| author_sort | Chiang Zhu |
| collection | DOAJ |
| description | This study investigates the evolution of stress and its induced carrier mobility gain in FinFET, GAAFET, and Si/SiGe hybrid channel GAAFET throughout the process flow using technology computer-aided design (TCAD) tool, which has been calibrated with experimental data from the transmission electron microscopy (TEM) and nano-beam precession electron diffraction (PED) techniques. The stress evolution indicates that Fin recess, S/D epi growth and Gate removal are three crucial process steps that influence channel stress. For nFETs, FinFET achieves a mobility gain from channel stress of approximately 0.8%, whereas GAAFET exhibits a mobility gain of 7.5%, representing nearly a tenfold increase, mainly due to the differences in process flow starting from multi epitaxial layers. For pFETs, GAAFET achieves a 20% and 60% improvement in stress and stress-induced hole mobility gain compared to FinFET. Furthermore, Si/Si0.7Ge0.3 hybrid channel GAAFET shows a further improvement of 100% and 65% on stress level, and an improvement of 231% and 105% on hole mobility gain over FinFET and GAAFET, respectively. Moreover, it implies that the higher stress-induced mobility gain in p-type than n-type GAAFET is expected to mitigate the mobility imbalance between holes and electrons caused by the change of dominant surface orientation from {110} in FinFET to {001} in GAAFET. This work gives a comprehensive picture of the process-dependent evolution of channel stress and its mobility gain in different advanced device structures, and offers new insights into the mobility balance in GAAFET from the perspective of stress. |
| format | Article |
| id | doaj-art-b0cc97d3973c40f1964457b8d02e7448 |
| institution | Kabale University |
| issn | 2169-3536 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
| record_format | Article |
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| spelling | doaj-art-b0cc97d3973c40f1964457b8d02e74482025-02-06T00:00:16ZengIEEEIEEE Access2169-35362025-01-0113216002160910.1109/ACCESS.2025.353428010854214Process-Dependent Evolution of Channel Stress and Stress-Induced Mobility Gain in FinFET, Normal GAAFET, and Si/SiGe Hybrid Channel GAAFETChiang Zhu0https://orcid.org/0009-0001-4095-3880Xiaona Zhu1https://orcid.org/0000-0001-8305-8870Shaofeng Yu2https://orcid.org/0000-0001-8008-6278David Wei Zhang3School of Microelectronics, Fudan University, Shanghai, ChinaSchool of Microelectronics, Fudan University, Shanghai, ChinaSchool of Microelectronics, Fudan University, Shanghai, ChinaSchool of Microelectronics, Fudan University, Shanghai, ChinaThis study investigates the evolution of stress and its induced carrier mobility gain in FinFET, GAAFET, and Si/SiGe hybrid channel GAAFET throughout the process flow using technology computer-aided design (TCAD) tool, which has been calibrated with experimental data from the transmission electron microscopy (TEM) and nano-beam precession electron diffraction (PED) techniques. The stress evolution indicates that Fin recess, S/D epi growth and Gate removal are three crucial process steps that influence channel stress. For nFETs, FinFET achieves a mobility gain from channel stress of approximately 0.8%, whereas GAAFET exhibits a mobility gain of 7.5%, representing nearly a tenfold increase, mainly due to the differences in process flow starting from multi epitaxial layers. For pFETs, GAAFET achieves a 20% and 60% improvement in stress and stress-induced hole mobility gain compared to FinFET. Furthermore, Si/Si0.7Ge0.3 hybrid channel GAAFET shows a further improvement of 100% and 65% on stress level, and an improvement of 231% and 105% on hole mobility gain over FinFET and GAAFET, respectively. Moreover, it implies that the higher stress-induced mobility gain in p-type than n-type GAAFET is expected to mitigate the mobility imbalance between holes and electrons caused by the change of dominant surface orientation from {110} in FinFET to {001} in GAAFET. This work gives a comprehensive picture of the process-dependent evolution of channel stress and its mobility gain in different advanced device structures, and offers new insights into the mobility balance in GAAFET from the perspective of stress.https://ieeexplore.ieee.org/document/10854214/Carrier mobilitychannel stressFinFETGAAFETSiGe channelTCAD |
| spellingShingle | Chiang Zhu Xiaona Zhu Shaofeng Yu David Wei Zhang Process-Dependent Evolution of Channel Stress and Stress-Induced Mobility Gain in FinFET, Normal GAAFET, and Si/SiGe Hybrid Channel GAAFET IEEE Access Carrier mobility channel stress FinFET GAAFET SiGe channel TCAD |
| title | Process-Dependent Evolution of Channel Stress and Stress-Induced Mobility Gain in FinFET, Normal GAAFET, and Si/SiGe Hybrid Channel GAAFET |
| title_full | Process-Dependent Evolution of Channel Stress and Stress-Induced Mobility Gain in FinFET, Normal GAAFET, and Si/SiGe Hybrid Channel GAAFET |
| title_fullStr | Process-Dependent Evolution of Channel Stress and Stress-Induced Mobility Gain in FinFET, Normal GAAFET, and Si/SiGe Hybrid Channel GAAFET |
| title_full_unstemmed | Process-Dependent Evolution of Channel Stress and Stress-Induced Mobility Gain in FinFET, Normal GAAFET, and Si/SiGe Hybrid Channel GAAFET |
| title_short | Process-Dependent Evolution of Channel Stress and Stress-Induced Mobility Gain in FinFET, Normal GAAFET, and Si/SiGe Hybrid Channel GAAFET |
| title_sort | process dependent evolution of channel stress and stress induced mobility gain in finfet normal gaafet and si sige hybrid channel gaafet |
| topic | Carrier mobility channel stress FinFET GAAFET SiGe channel TCAD |
| url | https://ieeexplore.ieee.org/document/10854214/ |
| work_keys_str_mv | AT chiangzhu processdependentevolutionofchannelstressandstressinducedmobilitygaininfinfetnormalgaafetandsisigehybridchannelgaafet AT xiaonazhu processdependentevolutionofchannelstressandstressinducedmobilitygaininfinfetnormalgaafetandsisigehybridchannelgaafet AT shaofengyu processdependentevolutionofchannelstressandstressinducedmobilitygaininfinfetnormalgaafetandsisigehybridchannelgaafet AT davidweizhang processdependentevolutionofchannelstressandstressinducedmobilitygaininfinfetnormalgaafetandsisigehybridchannelgaafet |