Process-Dependent Evolution of Channel Stress and Stress-Induced Mobility Gain in FinFET, Normal GAAFET, and Si/SiGe Hybrid Channel GAAFET
This study investigates the evolution of stress and its induced carrier mobility gain in FinFET, GAAFET, and Si/SiGe hybrid channel GAAFET throughout the process flow using technology computer-aided design (TCAD) tool, which has been calibrated with experimental data from the transmission electron m...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
|
| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10854214/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|