APA (7th ed.) Citation

Zhu, C., Zhu, X., Yu, S., & Zhang, D. W. Process-Dependent Evolution of Channel Stress and Stress-Induced Mobility Gain in FinFET, Normal GAAFET, and Si/SiGe Hybrid Channel GAAFET. IEEE.

Chicago Style (17th ed.) Citation

Zhu, Chiang, Xiaona Zhu, Shaofeng Yu, and David Wei Zhang. Process-Dependent Evolution of Channel Stress and Stress-Induced Mobility Gain in FinFET, Normal GAAFET, and Si/SiGe Hybrid Channel GAAFET. IEEE.

MLA (9th ed.) Citation

Zhu, Chiang, et al. Process-Dependent Evolution of Channel Stress and Stress-Induced Mobility Gain in FinFET, Normal GAAFET, and Si/SiGe Hybrid Channel GAAFET. IEEE.