Performance Assessment of GaAs Pocket-Doped Dual-Material Gate-Oxide-Stack DG-TFET at Device and Circuit Level
This study explores the impact of integrating a gallium arsenide (GaAs) pocket at the source and drain in a dual-material gate-oxide-stack double-gate tunnel field-effect transistor (DMGOSDG-TFET). The performance of this DMGOSDG-TFET, employing work-function engineering and gate-oxide-stack techniq...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2024-01-01
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| Series: | IET Circuits, Devices and Systems |
| Online Access: | http://dx.doi.org/10.1049/2024/9925894 |
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