Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing
β-Ga2O3 thin films were grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. The films were grown using an elemental gallium source and oxygen supplied by an RF plasma source. Reflection high-energy electron diffraction (RHEED) was used to monitor the surface quality in re...
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| Format: | Article |
| Language: | English |
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Wiley
2018-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2018/9450157 |
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| author | Abraham Arias Nicola Nedev Susmita Ghose Juan Salvador Rojas-Ramirez David Mateos Mario Curiel Alvarez Oscar Pérez Mariel Suárez Benjamin Valdez-Salas Ravi Droopad |
| author_facet | Abraham Arias Nicola Nedev Susmita Ghose Juan Salvador Rojas-Ramirez David Mateos Mario Curiel Alvarez Oscar Pérez Mariel Suárez Benjamin Valdez-Salas Ravi Droopad |
| author_sort | Abraham Arias |
| collection | DOAJ |
| description | β-Ga2O3 thin films were grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. The films were grown using an elemental gallium source and oxygen supplied by an RF plasma source. Reflection high-energy electron diffraction (RHEED) was used to monitor the surface quality in real time. Both in situ RHEED and ex situ X-ray diffraction confirmed the formation of single crystal β-phase films with excellent crystallinity on c-plane sapphire. Spectroscopic ellipsometry was used to determine the film thicknesses, giving values in the 11.6–18.8 nm range and the refractive index dispersion curves. UV-Vis transmittance measurements revealed that strong absorption of β-Ga2O3 starts at ∼270 nm. Top metal contacts were deposited by thermal evaporation for I-V characterization, which has been carried out in dark, as well as under visible and UV light illumination. The optical and electrical measurements showed that the grown thin films of β-Ga2O3 are excellent candidates for deep-ultraviolet detection and sensing. |
| format | Article |
| id | doaj-art-afd2dfbdfe7747b39b36ed97143b839b |
| institution | Kabale University |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2018-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-afd2dfbdfe7747b39b36ed97143b839b2025-02-03T01:11:39ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422018-01-01201810.1155/2018/94501579450157Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV SensingAbraham Arias0Nicola Nedev1Susmita Ghose2Juan Salvador Rojas-Ramirez3David Mateos4Mario Curiel Alvarez5Oscar Pérez6Mariel Suárez7Benjamin Valdez-Salas8Ravi Droopad9Facultad de Ingeniería, Universidad Autónoma de Baja California, Blvd. Benito Juárez s/n, 21280 Mexicali, BC, MexicoInstituto de Ingeniería, Universidad Autónoma de Baja California, Blvd. Benito Juárez s/n, 21280 Mexicali, BC, MexicoMaterials Science, Engineering and Commercialization Program, Texas State University, San Marcos, TX 78666, USAIngram School of Engineering, Texas State University, San Marcos, TX 78666, USAInstituto de Ingeniería, Universidad Autónoma de Baja California, Blvd. Benito Juárez s/n, 21280 Mexicali, BC, MexicoInstituto de Ingeniería, Universidad Autónoma de Baja California, Blvd. Benito Juárez s/n, 21280 Mexicali, BC, MexicoInstituto de Ingeniería, Universidad Autónoma de Baja California, Blvd. Benito Juárez s/n, 21280 Mexicali, BC, MexicoInstituto de Ingeniería, Universidad Autónoma de Baja California, Blvd. Benito Juárez s/n, 21280 Mexicali, BC, MexicoInstituto de Ingeniería, Universidad Autónoma de Baja California, Blvd. Benito Juárez s/n, 21280 Mexicali, BC, MexicoIngram School of Engineering, Texas State University, San Marcos, TX 78666, USAβ-Ga2O3 thin films were grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. The films were grown using an elemental gallium source and oxygen supplied by an RF plasma source. Reflection high-energy electron diffraction (RHEED) was used to monitor the surface quality in real time. Both in situ RHEED and ex situ X-ray diffraction confirmed the formation of single crystal β-phase films with excellent crystallinity on c-plane sapphire. Spectroscopic ellipsometry was used to determine the film thicknesses, giving values in the 11.6–18.8 nm range and the refractive index dispersion curves. UV-Vis transmittance measurements revealed that strong absorption of β-Ga2O3 starts at ∼270 nm. Top metal contacts were deposited by thermal evaporation for I-V characterization, which has been carried out in dark, as well as under visible and UV light illumination. The optical and electrical measurements showed that the grown thin films of β-Ga2O3 are excellent candidates for deep-ultraviolet detection and sensing.http://dx.doi.org/10.1155/2018/9450157 |
| spellingShingle | Abraham Arias Nicola Nedev Susmita Ghose Juan Salvador Rojas-Ramirez David Mateos Mario Curiel Alvarez Oscar Pérez Mariel Suárez Benjamin Valdez-Salas Ravi Droopad Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing Advances in Materials Science and Engineering |
| title | Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing |
| title_full | Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing |
| title_fullStr | Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing |
| title_full_unstemmed | Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing |
| title_short | Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing |
| title_sort | structural optical and electrical characterization of β ga2o3 thin films grown by plasma assisted molecular beam epitaxy suitable for uv sensing |
| url | http://dx.doi.org/10.1155/2018/9450157 |
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