Chemically Engineered GaN Thin Films for Light‐Stimulated Artificial Synapses
The conventional von Neumann architecture is increasingly losing the capacity to satisfy the urgent demand for high‐speed parallel computing, energy efficiency, and ultralow power consumption owing to the rapid growth of information. Brain‐inspired neuromorphic computing presents an opportunity to o...
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-02-01
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| Series: | Advanced Photonics Research |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/adpr.202400146 |
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| author | Xiaoqin Yang Jiawen Lu Luyu Zhao Xiaorui Han Zhongwei Bai Peiwen Quan Liangshuai Xie Liang Li Haoxuan Sun Mark Hermann Rummeli Bingcheng Luo Hong Gu |
| author_facet | Xiaoqin Yang Jiawen Lu Luyu Zhao Xiaorui Han Zhongwei Bai Peiwen Quan Liangshuai Xie Liang Li Haoxuan Sun Mark Hermann Rummeli Bingcheng Luo Hong Gu |
| author_sort | Xiaoqin Yang |
| collection | DOAJ |
| description | The conventional von Neumann architecture is increasingly losing the capacity to satisfy the urgent demand for high‐speed parallel computing, energy efficiency, and ultralow power consumption owing to the rapid growth of information. Brain‐inspired neuromorphic computing presents an opportunity to overcome the inherent limitations of conventional computers. In recent years, photoelectric neuromorphic devices have garnered significant attention for their potential applications in brain–machine interfaces, intelligent sensing, and neuromorphic computing. Herein, a simple two‐terminal light‐stimulated synaptic device is fabricated using GaN thin films through metal‐organic chemical vapor deposition. The device demonstrates the ability to mimic various biological synaptic functions, including learning‐experience behavior, the transition from short‐term to long‐term memory, paired‐pulse facilitation, and visual recognition and memory. In this research, an effective strategy for developing photonic synapses using GaN‐based materials in neuromorphic computing and bio‐realistic artificial intelligence systems is presented. |
| format | Article |
| id | doaj-art-af5157aa45c54b99a169333d19e557ee |
| institution | Kabale University |
| issn | 2699-9293 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Photonics Research |
| spelling | doaj-art-af5157aa45c54b99a169333d19e557ee2025-02-06T08:56:39ZengWiley-VCHAdvanced Photonics Research2699-92932025-02-0162n/an/a10.1002/adpr.202400146Chemically Engineered GaN Thin Films for Light‐Stimulated Artificial SynapsesXiaoqin Yang0Jiawen Lu1Luyu Zhao2Xiaorui Han3Zhongwei Bai4Peiwen Quan5Liangshuai Xie6Liang Li7Haoxuan Sun8Mark Hermann Rummeli9Bingcheng Luo10Hong Gu11Information Materials Research Department Suzhou Laboratory Suzhou 215123 ChinaSchool of Nano Science and Technology University of Science and Technology of China Suzhou 215127 ChinaSchool of Nano Science and Technology University of Science and Technology of China Suzhou 215127 ChinaMOE Key Laboratory of Material Physics and Chemistry under Extraordinary, School of Physical Science and Technology Northwestern Polytechnical University Xi'an Shaanxi 710072 ChinaMOE Key Laboratory of Material Physics and Chemistry under Extraordinary, School of Physical Science and Technology Northwestern Polytechnical University Xi'an Shaanxi 710072 ChinaSchool of Nano Science and Technology University of Science and Technology of China Suzhou 215127 ChinaSchool of Nano Science and Technology University of Science and Technology of China Suzhou 215127 ChinaSchool of Physical Science and Technology Center for Energy Conversion Materials & Physics (CECMP) Jiangsu Key Laboratory of Frontier Material Physics and Devices Soochow University Suzhou 215006 ChinaSchool of Physical Science and Technology Center for Energy Conversion Materials & Physics (CECMP) Jiangsu Key Laboratory of Frontier Material Physics and Devices Soochow University Suzhou 215006 ChinaSoochow Institute for Energy and Materials Innovations, College of Energy, Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou 215006 ChinaMOE Key Laboratory of Material Physics and Chemistry under Extraordinary, School of Physical Science and Technology Northwestern Polytechnical University Xi'an Shaanxi 710072 ChinaInformation Materials Research Department Suzhou Laboratory Suzhou 215123 ChinaThe conventional von Neumann architecture is increasingly losing the capacity to satisfy the urgent demand for high‐speed parallel computing, energy efficiency, and ultralow power consumption owing to the rapid growth of information. Brain‐inspired neuromorphic computing presents an opportunity to overcome the inherent limitations of conventional computers. In recent years, photoelectric neuromorphic devices have garnered significant attention for their potential applications in brain–machine interfaces, intelligent sensing, and neuromorphic computing. Herein, a simple two‐terminal light‐stimulated synaptic device is fabricated using GaN thin films through metal‐organic chemical vapor deposition. The device demonstrates the ability to mimic various biological synaptic functions, including learning‐experience behavior, the transition from short‐term to long‐term memory, paired‐pulse facilitation, and visual recognition and memory. In this research, an effective strategy for developing photonic synapses using GaN‐based materials in neuromorphic computing and bio‐realistic artificial intelligence systems is presented.https://doi.org/10.1002/adpr.202400146artificial synapsesGaNlight‐stimulated synaptic devicesmetal‐organic chemical vapor depositionspersistent photoconductivities |
| spellingShingle | Xiaoqin Yang Jiawen Lu Luyu Zhao Xiaorui Han Zhongwei Bai Peiwen Quan Liangshuai Xie Liang Li Haoxuan Sun Mark Hermann Rummeli Bingcheng Luo Hong Gu Chemically Engineered GaN Thin Films for Light‐Stimulated Artificial Synapses Advanced Photonics Research artificial synapses GaN light‐stimulated synaptic devices metal‐organic chemical vapor depositions persistent photoconductivities |
| title | Chemically Engineered GaN Thin Films for Light‐Stimulated Artificial Synapses |
| title_full | Chemically Engineered GaN Thin Films for Light‐Stimulated Artificial Synapses |
| title_fullStr | Chemically Engineered GaN Thin Films for Light‐Stimulated Artificial Synapses |
| title_full_unstemmed | Chemically Engineered GaN Thin Films for Light‐Stimulated Artificial Synapses |
| title_short | Chemically Engineered GaN Thin Films for Light‐Stimulated Artificial Synapses |
| title_sort | chemically engineered gan thin films for light stimulated artificial synapses |
| topic | artificial synapses GaN light‐stimulated synaptic devices metal‐organic chemical vapor depositions persistent photoconductivities |
| url | https://doi.org/10.1002/adpr.202400146 |
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