Cryo-SIMPLY: A Reliable STT-MRAM-Based Smart Material Implication Architecture for In-Memory Computing

Cryo-SIMPLY: A Reliable STT-MRAM-Based Smart Material Implication Architecture for In-Memory Computing

This paper presents Cryo-SIMPLY, a reliable smart material implication (SIMPLY) operating at cryogenic conditions (77 K). The assessment considers SIMPLY schemes based on spin-transfer torque magnetic random access memory (STT-MRAM) technology with single-barrier magnetic tunnel junction (SMTJ) and...

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Bibliographic Details
Main Authors: Tatiana Moposita, Esteban Garzón, Adam Teman, Marco Lanuzza
Format: Article
Language:English
Published: MDPI AG 2024-12-01
Series:Nanomaterials
Subjects:
STT-MRAM
SMTJ
DMTJ
magnetic tunnel junction
in-memory computing
material implication
Online Access:https://www.mdpi.com/2079-4991/15/1/9
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