Preparation and Properties of SnO2 Film Deposited by Magnetron Sputtering
Tin oxide SnO2 films were prepared by RF magnetron sputtering. The effects of oxygen partial pressure percentage on the SnO2 property have been investigated to obtain relatively high-resistivity SnO2 films which could be used as buffer layers to optimize the performance of CdTe/CdS solar cells. The...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2012-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2012/235971 |
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| _version_ | 1832552381814931456 |
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| author | Dan Leng Lili Wu Hongchao Jiang Yu Zhao Jingquan Zhang Wei Li Lianghuan Feng |
| author_facet | Dan Leng Lili Wu Hongchao Jiang Yu Zhao Jingquan Zhang Wei Li Lianghuan Feng |
| author_sort | Dan Leng |
| collection | DOAJ |
| description | Tin oxide SnO2 films were prepared by RF magnetron sputtering. The effects of oxygen partial pressure percentage on the SnO2 property have been investigated to obtain relatively high-resistivity SnO2 films which could be used as buffer layers to optimize the performance of CdTe/CdS solar cells. The oxygen partial pressure percentage varied in the range of 1%~10%. The results show that the introduction of oxygen would suppress the deposition and growth of SnO2 films. Electrical measurement suggests that the film resistivity decreases with the increase of oxygen pressure. The SnO2 films with resistivity of 232 Ω cm were obtained in pure Ar atmosphere. All SnO2 films fabricated with different oxygen partial pressure percentage have almost the same optical band gap. |
| format | Article |
| id | doaj-art-ad6adce6ba3b461cba1a6f2bbdb47123 |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2012-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-ad6adce6ba3b461cba1a6f2bbdb471232025-02-03T05:58:53ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2012-01-01201210.1155/2012/235971235971Preparation and Properties of SnO2 Film Deposited by Magnetron SputteringDan Leng0Lili Wu1Hongchao Jiang2Yu Zhao3Jingquan Zhang4Wei Li5Lianghuan Feng6College of Materials Science and Engineering, Sichuan University, Chengdu 610064, ChinaCollege of Materials Science and Engineering, Sichuan University, Chengdu 610064, ChinaCollege of Materials Science and Engineering, Sichuan University, Chengdu 610064, ChinaCollege of Materials Science and Engineering, Sichuan University, Chengdu 610064, ChinaCollege of Materials Science and Engineering, Sichuan University, Chengdu 610064, ChinaCollege of Materials Science and Engineering, Sichuan University, Chengdu 610064, ChinaCollege of Materials Science and Engineering, Sichuan University, Chengdu 610064, ChinaTin oxide SnO2 films were prepared by RF magnetron sputtering. The effects of oxygen partial pressure percentage on the SnO2 property have been investigated to obtain relatively high-resistivity SnO2 films which could be used as buffer layers to optimize the performance of CdTe/CdS solar cells. The oxygen partial pressure percentage varied in the range of 1%~10%. The results show that the introduction of oxygen would suppress the deposition and growth of SnO2 films. Electrical measurement suggests that the film resistivity decreases with the increase of oxygen pressure. The SnO2 films with resistivity of 232 Ω cm were obtained in pure Ar atmosphere. All SnO2 films fabricated with different oxygen partial pressure percentage have almost the same optical band gap.http://dx.doi.org/10.1155/2012/235971 |
| spellingShingle | Dan Leng Lili Wu Hongchao Jiang Yu Zhao Jingquan Zhang Wei Li Lianghuan Feng Preparation and Properties of SnO2 Film Deposited by Magnetron Sputtering International Journal of Photoenergy |
| title | Preparation and Properties of SnO2 Film Deposited by Magnetron Sputtering |
| title_full | Preparation and Properties of SnO2 Film Deposited by Magnetron Sputtering |
| title_fullStr | Preparation and Properties of SnO2 Film Deposited by Magnetron Sputtering |
| title_full_unstemmed | Preparation and Properties of SnO2 Film Deposited by Magnetron Sputtering |
| title_short | Preparation and Properties of SnO2 Film Deposited by Magnetron Sputtering |
| title_sort | preparation and properties of sno2 film deposited by magnetron sputtering |
| url | http://dx.doi.org/10.1155/2012/235971 |
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