Trap Analysis Based on Low-Frequency Noise for SiC Power MOSFETs Under Repetitive Short-Circuit Stress

Trap Analysis Based on Low-Frequency Noise for SiC Power MOSFETs Under Repetitive Short-Circuit Stress

In this paper, the degradation behavior of the electrical characteristics was investigated, and trap analysis based on low-frequency noise (LFN) was carried out for the commercial 1.2-kV /30-A silicon carbide (SiC) power MOSFETs under repetitive short-circuit (SC) stress. The experiment results show...

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Bibliographic Details
Main Authors: J. L. Wang, Y. Q. Chen, J. T. Feng, X. B. Xu, Y. F. En, B. Hou, R. Gao, Y. Chen, Y. Huang, K. W. Geng
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Repetitive short-circuit (SC)
low-frequency noise (LFN)
traps
silicon carbide (SiC) power MOSFETs
Online Access:https://ieeexplore.ieee.org/document/8981958/
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https://ieeexplore.ieee.org/document/8981958/

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