Fabrication of GaN vertical junction barrier Schottky diode by Mg diffusion from shallow N/Mg ion-implantation segment
A vertical GaN p–n junction diode (PND) and junction barrier Schottky diode (JBSD) were fabricated by selective Mg diffusion. Mg was diffused from a shallow N/Mg ion-implantation segment to a depth of 800 nm with a concentration of 1 × 10 ^17 –3 × 10 ^18 cm ^−3 by annealing with an AlN capping layer...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
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| Online Access: | https://doi.org/10.35848/1882-0786/ada71a |
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| author | Woong Kwon Yuta Itoh Atsushi Tanaka Hirotaka Watanabe Yoshio Honda Hiroshi Amano |
| author_facet | Woong Kwon Yuta Itoh Atsushi Tanaka Hirotaka Watanabe Yoshio Honda Hiroshi Amano |
| author_sort | Woong Kwon |
| collection | DOAJ |
| description | A vertical GaN p–n junction diode (PND) and junction barrier Schottky diode (JBSD) were fabricated by selective Mg diffusion. Mg was diffused from a shallow N/Mg ion-implantation segment to a depth of 800 nm with a concentration of 1 × 10 ^17 –3 × 10 ^18 cm ^−3 by annealing with an AlN capping layer at 1300 ℃ for 5 min under atmospheric N _2 pressure. The PND and JBSD exhibited specific on-resistances of 2.3–2.6 mΩ cm ^2 and repeatable breakdowns at 1.95 kV without degradation in breakdown voltage or leakage current. Additionally, the JBSD achieved a high-on/off ratio of 9.1 × 10 ^7 between 1.5 V and −1 kV. |
| format | Article |
| id | doaj-art-a6e7a713c51b487ab82d6027e5d0cb12 |
| institution | Kabale University |
| issn | 1882-0786 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Applied Physics Express |
| spelling | doaj-art-a6e7a713c51b487ab82d6027e5d0cb122025-01-23T04:01:04ZengIOP PublishingApplied Physics Express1882-07862025-01-0118101650510.35848/1882-0786/ada71aFabrication of GaN vertical junction barrier Schottky diode by Mg diffusion from shallow N/Mg ion-implantation segmentWoong Kwon0https://orcid.org/0000-0002-6174-1852Yuta Itoh1https://orcid.org/0000-0003-2126-0402Atsushi Tanaka2Hirotaka Watanabe3Yoshio Honda4Hiroshi Amano5Department of Electronics, Nagoya University , Nagoya, JapanDepartment of Electronics, Nagoya University , Nagoya, JapanInstitute of Materials and Systems for Sustainability, Nagoya University , Nagoya, JapanInstitute of Materials and Systems for Sustainability, Nagoya University , Nagoya, JapanInstitute of Materials and Systems for Sustainability, Nagoya University , Nagoya, JapanInstitute of Materials and Systems for Sustainability, Nagoya University , Nagoya, JapanA vertical GaN p–n junction diode (PND) and junction barrier Schottky diode (JBSD) were fabricated by selective Mg diffusion. Mg was diffused from a shallow N/Mg ion-implantation segment to a depth of 800 nm with a concentration of 1 × 10 ^17 –3 × 10 ^18 cm ^−3 by annealing with an AlN capping layer at 1300 ℃ for 5 min under atmospheric N _2 pressure. The PND and JBSD exhibited specific on-resistances of 2.3–2.6 mΩ cm ^2 and repeatable breakdowns at 1.95 kV without degradation in breakdown voltage or leakage current. Additionally, the JBSD achieved a high-on/off ratio of 9.1 × 10 ^7 between 1.5 V and −1 kV.https://doi.org/10.35848/1882-0786/ada71agallium nitridevertical power deviceselective dopingMgion implantationp–n diode |
| spellingShingle | Woong Kwon Yuta Itoh Atsushi Tanaka Hirotaka Watanabe Yoshio Honda Hiroshi Amano Fabrication of GaN vertical junction barrier Schottky diode by Mg diffusion from shallow N/Mg ion-implantation segment Applied Physics Express gallium nitride vertical power device selective doping Mg ion implantation p–n diode |
| title | Fabrication of GaN vertical junction barrier Schottky diode by Mg diffusion from shallow N/Mg ion-implantation segment |
| title_full | Fabrication of GaN vertical junction barrier Schottky diode by Mg diffusion from shallow N/Mg ion-implantation segment |
| title_fullStr | Fabrication of GaN vertical junction barrier Schottky diode by Mg diffusion from shallow N/Mg ion-implantation segment |
| title_full_unstemmed | Fabrication of GaN vertical junction barrier Schottky diode by Mg diffusion from shallow N/Mg ion-implantation segment |
| title_short | Fabrication of GaN vertical junction barrier Schottky diode by Mg diffusion from shallow N/Mg ion-implantation segment |
| title_sort | fabrication of gan vertical junction barrier schottky diode by mg diffusion from shallow n mg ion implantation segment |
| topic | gallium nitride vertical power device selective doping Mg ion implantation p–n diode |
| url | https://doi.org/10.35848/1882-0786/ada71a |
| work_keys_str_mv | AT woongkwon fabricationofganverticaljunctionbarrierschottkydiodebymgdiffusionfromshallownmgionimplantationsegment AT yutaitoh fabricationofganverticaljunctionbarrierschottkydiodebymgdiffusionfromshallownmgionimplantationsegment AT atsushitanaka fabricationofganverticaljunctionbarrierschottkydiodebymgdiffusionfromshallownmgionimplantationsegment AT hirotakawatanabe fabricationofganverticaljunctionbarrierschottkydiodebymgdiffusionfromshallownmgionimplantationsegment AT yoshiohonda fabricationofganverticaljunctionbarrierschottkydiodebymgdiffusionfromshallownmgionimplantationsegment AT hiroshiamano fabricationofganverticaljunctionbarrierschottkydiodebymgdiffusionfromshallownmgionimplantationsegment |