Radiation Hardness of Flash Memory Fabricated in Deep-Submicron Technology
This paper discusses the current problem of the electronic memory reliability in terms of the ionizing radiation effects. The topic is actual since the high degree of components' miniaturization integrated into the flash memory causes the extreme sensitivity of this memory type to the ionizing...
Saved in:
Main Authors: | Bojan Cavrić, Edin Dolićanin, Predrag Petronijević, Milić Pejović, Koviljka Stanković |
---|---|
Format: | Article |
Language: | English |
Published: |
Wiley
2013-01-01
|
Series: | International Journal of Photoenergy |
Online Access: | http://dx.doi.org/10.1155/2013/158792 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Retracted: Radiation Hardness of Flash Memory Fabricated in Deep-Submicron Technology
by: International Journal of Photoenergy
Published: (2018-01-01) -
Radiation Effects in Solar Cells and Optoelectronic Devices
by: Aleksandra Vasic, et al.
Published: (2013-01-01) -
EQUIPMENT FOR NONDESTRUCTIVE TESTING OF SILICON WAFERS SUBMICRON TOPOLOGY DURING THE FABRICATION OF INTEGRATED CIRCUITS
by: S. A. Chizhik, et al.
Published: (2015-03-01) -
Characteristic Features of Electric Fields Radiated by Cloud Flashes in Himalayan Region
by: Pitri Bhakta Adhikari, et al.
Published: (2020-01-01) -
Fast-Read Storage Performance by Thyristor Operation in 3-D Flash Memory
by: Tomoya Sanuki, et al.
Published: (2024-01-01)