Radiation Hardness of Flash Memory Fabricated in Deep-Submicron Technology

This paper discusses the current problem of the electronic memory reliability in terms of the ionizing radiation effects. The topic is actual since the high degree of components' miniaturization integrated into the flash memory causes the extreme sensitivity of this memory type to the ionizing...

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Main Authors: Bojan Cavrić, Edin Dolićanin, Predrag Petronijević, Milić Pejović, Koviljka Stanković
Format: Article
Language:English
Published: Wiley 2013-01-01
Series:International Journal of Photoenergy
Online Access:http://dx.doi.org/10.1155/2013/158792
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author Bojan Cavrić
Edin Dolićanin
Predrag Petronijević
Milić Pejović
Koviljka Stanković
author_facet Bojan Cavrić
Edin Dolićanin
Predrag Petronijević
Milić Pejović
Koviljka Stanković
author_sort Bojan Cavrić
collection DOAJ
description This paper discusses the current problem of the electronic memory reliability in terms of the ionizing radiation effects. The topic is actual since the high degree of components' miniaturization integrated into the flash memory causes the extreme sensitivity of this memory type to the ionizing radiation effects. The effects of ionizing radiation may cause changes in stored data, or even the physical destruction of the components. At the end, the experimentally and numerically obtained effects of radiation on specific flash memories are shown and discussed. The results obtained by laboratory and numerical experiments showed good agreement with each other and with the theoretically expected results.
format Article
id doaj-art-a369aee70f404d4aa4dd3ac673ef3b4c
institution Kabale University
issn 1110-662X
1687-529X
language English
publishDate 2013-01-01
publisher Wiley
record_format Article
series International Journal of Photoenergy
spelling doaj-art-a369aee70f404d4aa4dd3ac673ef3b4c2025-02-03T05:54:30ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2013-01-01201310.1155/2013/158792158792Radiation Hardness of Flash Memory Fabricated in Deep-Submicron TechnologyBojan Cavrić0Edin Dolićanin1Predrag Petronijević2Milić Pejović3Koviljka Stanković4Life Robinson Private Hospital, Hospital Road, P.O. Box 37, Randfontein 1760, South AfricaFaculty of Electrical Engineering, University of Belgrade, Bulevar Kralja Aleksandra 73, 11000 Belgrade, SerbiaFaculty of Electrical Engineering, University of Belgrade, Bulevar Kralja Aleksandra 73, 11000 Belgrade, SerbiaFaculty of Electronic Engineering, University of Niš, Aleksandra Medvedeva 14, 18000 Niš, SerbiaFaculty of Electrical Engineering, University of Belgrade, Bulevar Kralja Aleksandra 73, 11000 Belgrade, SerbiaThis paper discusses the current problem of the electronic memory reliability in terms of the ionizing radiation effects. The topic is actual since the high degree of components' miniaturization integrated into the flash memory causes the extreme sensitivity of this memory type to the ionizing radiation effects. The effects of ionizing radiation may cause changes in stored data, or even the physical destruction of the components. At the end, the experimentally and numerically obtained effects of radiation on specific flash memories are shown and discussed. The results obtained by laboratory and numerical experiments showed good agreement with each other and with the theoretically expected results.http://dx.doi.org/10.1155/2013/158792
spellingShingle Bojan Cavrić
Edin Dolićanin
Predrag Petronijević
Milić Pejović
Koviljka Stanković
Radiation Hardness of Flash Memory Fabricated in Deep-Submicron Technology
International Journal of Photoenergy
title Radiation Hardness of Flash Memory Fabricated in Deep-Submicron Technology
title_full Radiation Hardness of Flash Memory Fabricated in Deep-Submicron Technology
title_fullStr Radiation Hardness of Flash Memory Fabricated in Deep-Submicron Technology
title_full_unstemmed Radiation Hardness of Flash Memory Fabricated in Deep-Submicron Technology
title_short Radiation Hardness of Flash Memory Fabricated in Deep-Submicron Technology
title_sort radiation hardness of flash memory fabricated in deep submicron technology
url http://dx.doi.org/10.1155/2013/158792
work_keys_str_mv AT bojancavric radiationhardnessofflashmemoryfabricatedindeepsubmicrontechnology
AT edindolicanin radiationhardnessofflashmemoryfabricatedindeepsubmicrontechnology
AT predragpetronijevic radiationhardnessofflashmemoryfabricatedindeepsubmicrontechnology
AT milicpejovic radiationhardnessofflashmemoryfabricatedindeepsubmicrontechnology
AT koviljkastankovic radiationhardnessofflashmemoryfabricatedindeepsubmicrontechnology