Radiation Hardness of Flash Memory Fabricated in Deep-Submicron Technology
This paper discusses the current problem of the electronic memory reliability in terms of the ionizing radiation effects. The topic is actual since the high degree of components' miniaturization integrated into the flash memory causes the extreme sensitivity of this memory type to the ionizing...
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Format: | Article |
Language: | English |
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Wiley
2013-01-01
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Series: | International Journal of Photoenergy |
Online Access: | http://dx.doi.org/10.1155/2013/158792 |
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author | Bojan Cavrić Edin Dolićanin Predrag Petronijević Milić Pejović Koviljka Stanković |
author_facet | Bojan Cavrić Edin Dolićanin Predrag Petronijević Milić Pejović Koviljka Stanković |
author_sort | Bojan Cavrić |
collection | DOAJ |
description | This paper discusses the current problem of the electronic memory reliability in terms of the ionizing radiation effects. The topic is actual since the high degree of components' miniaturization integrated into the flash memory causes the extreme sensitivity of this memory type to the ionizing radiation effects. The effects of ionizing radiation may cause changes in stored data, or even the physical destruction of the components. At the end, the experimentally and numerically obtained effects of radiation on specific flash memories are shown and discussed. The results obtained by laboratory and numerical experiments showed good agreement with each other and with the theoretically expected results. |
format | Article |
id | doaj-art-a369aee70f404d4aa4dd3ac673ef3b4c |
institution | Kabale University |
issn | 1110-662X 1687-529X |
language | English |
publishDate | 2013-01-01 |
publisher | Wiley |
record_format | Article |
series | International Journal of Photoenergy |
spelling | doaj-art-a369aee70f404d4aa4dd3ac673ef3b4c2025-02-03T05:54:30ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2013-01-01201310.1155/2013/158792158792Radiation Hardness of Flash Memory Fabricated in Deep-Submicron TechnologyBojan Cavrić0Edin Dolićanin1Predrag Petronijević2Milić Pejović3Koviljka Stanković4Life Robinson Private Hospital, Hospital Road, P.O. Box 37, Randfontein 1760, South AfricaFaculty of Electrical Engineering, University of Belgrade, Bulevar Kralja Aleksandra 73, 11000 Belgrade, SerbiaFaculty of Electrical Engineering, University of Belgrade, Bulevar Kralja Aleksandra 73, 11000 Belgrade, SerbiaFaculty of Electronic Engineering, University of Niš, Aleksandra Medvedeva 14, 18000 Niš, SerbiaFaculty of Electrical Engineering, University of Belgrade, Bulevar Kralja Aleksandra 73, 11000 Belgrade, SerbiaThis paper discusses the current problem of the electronic memory reliability in terms of the ionizing radiation effects. The topic is actual since the high degree of components' miniaturization integrated into the flash memory causes the extreme sensitivity of this memory type to the ionizing radiation effects. The effects of ionizing radiation may cause changes in stored data, or even the physical destruction of the components. At the end, the experimentally and numerically obtained effects of radiation on specific flash memories are shown and discussed. The results obtained by laboratory and numerical experiments showed good agreement with each other and with the theoretically expected results.http://dx.doi.org/10.1155/2013/158792 |
spellingShingle | Bojan Cavrić Edin Dolićanin Predrag Petronijević Milić Pejović Koviljka Stanković Radiation Hardness of Flash Memory Fabricated in Deep-Submicron Technology International Journal of Photoenergy |
title | Radiation Hardness of Flash Memory Fabricated in Deep-Submicron Technology |
title_full | Radiation Hardness of Flash Memory Fabricated in Deep-Submicron Technology |
title_fullStr | Radiation Hardness of Flash Memory Fabricated in Deep-Submicron Technology |
title_full_unstemmed | Radiation Hardness of Flash Memory Fabricated in Deep-Submicron Technology |
title_short | Radiation Hardness of Flash Memory Fabricated in Deep-Submicron Technology |
title_sort | radiation hardness of flash memory fabricated in deep submicron technology |
url | http://dx.doi.org/10.1155/2013/158792 |
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