Efficient anomalous valley Hall effect switching in antiferrovalley MnSe driven by magnetoelectric coupling

The exploration of two-dimensional antiferrovalley materials as potential candidates for valleytronics offers intriguing prospects to investigate exotic valley physics and develop next-generation nano-electronic devices. Achieving efficient anomalous valley Hall effect (AVHE) switching in antiferrov...

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Bibliographic Details
Main Authors: Yaping Wang, Xinguang Xu, Weixiao Ji, Wei Sun, Shengshi Li, Yanlu Li, Xian Zhao
Format: Article
Language:English
Published: Elsevier 2025-01-01
Series:Journal of Materiomics
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2352847824000297
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