Evaluation of Laser Doping of Si from MCLT Measurement
The measurement of minority carrier lifetime (MCLT) ofp-n Si fabricated with aid of laser doping technique was reported. The measurement is achieved by using open circuit voltage decay (OCVD) technique. The experiment data confirms that the value of MCLT and proftle of Voc decay were very sensitive...
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| Format: | Article |
| Language: | English |
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University of Baghdad, College of Science for Women
2004-06-01
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| Series: | مجلة بغداد للعلوم |
| Online Access: | http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/567 |
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| author | Baghdad Science Journal |
| author_facet | Baghdad Science Journal |
| author_sort | Baghdad Science Journal |
| collection | DOAJ |
| description | The measurement of minority carrier lifetime (MCLT) ofp-n Si fabricated with aid of laser doping technique was reported. The measurement is achieved by using open circuit voltage decay (OCVD) technique. The experiment data confirms that the value of MCLT and proftle of Voc decay were very sensitive to the doping laser energy. |
| format | Article |
| id | doaj-art-a2725b4b7c8f4e29bdc1e94434c5a2b6 |
| institution | DOAJ |
| issn | 2078-8665 2411-7986 |
| language | English |
| publishDate | 2004-06-01 |
| publisher | University of Baghdad, College of Science for Women |
| record_format | Article |
| series | مجلة بغداد للعلوم |
| spelling | doaj-art-a2725b4b7c8f4e29bdc1e94434c5a2b62025-08-20T02:51:35ZengUniversity of Baghdad, College of Science for Womenمجلة بغداد للعلوم2078-86652411-79862004-06-011210.21123/bsj.1.2.321-325Evaluation of Laser Doping of Si from MCLT MeasurementBaghdad Science JournalThe measurement of minority carrier lifetime (MCLT) ofp-n Si fabricated with aid of laser doping technique was reported. The measurement is achieved by using open circuit voltage decay (OCVD) technique. The experiment data confirms that the value of MCLT and proftle of Voc decay were very sensitive to the doping laser energy.http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/567 |
| spellingShingle | Baghdad Science Journal Evaluation of Laser Doping of Si from MCLT Measurement مجلة بغداد للعلوم |
| title | Evaluation of Laser Doping of Si from MCLT Measurement |
| title_full | Evaluation of Laser Doping of Si from MCLT Measurement |
| title_fullStr | Evaluation of Laser Doping of Si from MCLT Measurement |
| title_full_unstemmed | Evaluation of Laser Doping of Si from MCLT Measurement |
| title_short | Evaluation of Laser Doping of Si from MCLT Measurement |
| title_sort | evaluation of laser doping of si from mclt measurement |
| url | http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/567 |
| work_keys_str_mv | AT baghdadsciencejournal evaluationoflaserdopingofsifrommcltmeasurement |