Evaluation of Laser Doping of Si from MCLT Measurement
The measurement of minority carrier lifetime (MCLT) ofp-n Si fabricated with aid of laser doping technique was reported. The measurement is achieved by using open circuit voltage decay (OCVD) technique. The experiment data confirms that the value of MCLT and proftle of Voc decay were very sensitive...
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| Main Author: | |
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| Format: | Article |
| Language: | English |
| Published: |
University of Baghdad, College of Science for Women
2004-06-01
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| Series: | مجلة بغداد للعلوم |
| Online Access: | http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/567 |
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