Effect of precursor molarities on structural correlation with optoelectronic property of Zn2SnO4 nanostructured thin films
Zinc stannate, Zn2SnO4 (ZTO) has been recognized as the potential transparent conducting oxide (TCO) having reliable optoelectronic properties to be used in device applications like photovoltaic and display devices. In this study, the role of precursor solution molarity on structure and optoelectron...
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2025-06-01
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| author | Isha Arora Praveen Kumar Sharma Harkawal Singh Vanasundaram Natarajan |
| author_facet | Isha Arora Praveen Kumar Sharma Harkawal Singh Vanasundaram Natarajan |
| author_sort | Isha Arora |
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| description | Zinc stannate, Zn2SnO4 (ZTO) has been recognized as the potential transparent conducting oxide (TCO) having reliable optoelectronic properties to be used in device applications like photovoltaic and display devices. In this study, the role of precursor solution molarity on structure and optoelectronic characteristics of the synthesized ZTO films is reported. XRD results reveal polycrystalline structure of the samples featuring two dominant peaks corresponding to (311) and (222) planes of fcc inverse spinel structure. FESEM analysis shows variation in the microstructure of the films with solution molarity. The grain size has wide variations with a majority of large sized grains for highly precursor molarity. Raman spectroscopy observes the characteristic peaks of the cubic inverse spinel structure of ZTO and variation of their intensities with the precursor concentration. The samples with 0.1 M and 0.2 M are found to be highly transparent (∼80 %) with deterioration in transparency on either side. All the samples exhibit dual band gaps on account of the having the inverse spinel structure. The variation in solution molarity gave TCO films with electrical resistivity in the range of 10−3 Ω-cm and a carrier concentration of ∼1019 cm−3. The Zn2SnO4 sample with 0.2 M exhibited maximal mobility of 151 cm−3 along with minimal carrier concentration of 1018 cm−3. This work provides the optimized molarities and parameters that can be utilized in developing the future transparent conductors for the electronics application. |
| format | Article |
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| institution | Kabale University |
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| language | English |
| publishDate | 2025-06-01 |
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| spelling | doaj-art-a1b293d30ac64c519825c85f7b93602a2025-01-29T05:02:20ZengElsevierChemical Physics Impact2667-02242025-06-0110100836Effect of precursor molarities on structural correlation with optoelectronic property of Zn2SnO4 nanostructured thin filmsIsha Arora0Praveen Kumar Sharma1Harkawal Singh2Vanasundaram Natarajan3School of Natural Sciences, GNA University, Phagwara, 144401, Punjab, India; Corresponding author.Department of Physics and Astronomical Sciences, Central University of Jammu, Bagla, Samba, 181143, UT of J & K, India; Department of Physics, DAV University, Sarmastpur, Jalandhar, 144012, IndiaDepartment of Physics, DAV University, Sarmastpur, Jalandhar, 144012, IndiaDepartment of Physics, Malla Reddy University, Maisammaguda, Dulapally, Hyderabad, 500100, IndiaZinc stannate, Zn2SnO4 (ZTO) has been recognized as the potential transparent conducting oxide (TCO) having reliable optoelectronic properties to be used in device applications like photovoltaic and display devices. In this study, the role of precursor solution molarity on structure and optoelectronic characteristics of the synthesized ZTO films is reported. XRD results reveal polycrystalline structure of the samples featuring two dominant peaks corresponding to (311) and (222) planes of fcc inverse spinel structure. FESEM analysis shows variation in the microstructure of the films with solution molarity. The grain size has wide variations with a majority of large sized grains for highly precursor molarity. Raman spectroscopy observes the characteristic peaks of the cubic inverse spinel structure of ZTO and variation of their intensities with the precursor concentration. The samples with 0.1 M and 0.2 M are found to be highly transparent (∼80 %) with deterioration in transparency on either side. All the samples exhibit dual band gaps on account of the having the inverse spinel structure. The variation in solution molarity gave TCO films with electrical resistivity in the range of 10−3 Ω-cm and a carrier concentration of ∼1019 cm−3. The Zn2SnO4 sample with 0.2 M exhibited maximal mobility of 151 cm−3 along with minimal carrier concentration of 1018 cm−3. This work provides the optimized molarities and parameters that can be utilized in developing the future transparent conductors for the electronics application.http://www.sciencedirect.com/science/article/pii/S2667022425000246Transparent conducting oxides (TCOs)Zn2SnO4 systemSol-gel processingStructural characterization and optoelectronic properties |
| spellingShingle | Isha Arora Praveen Kumar Sharma Harkawal Singh Vanasundaram Natarajan Effect of precursor molarities on structural correlation with optoelectronic property of Zn2SnO4 nanostructured thin films Chemical Physics Impact Transparent conducting oxides (TCOs) Zn2SnO4 system Sol-gel processing Structural characterization and optoelectronic properties |
| title | Effect of precursor molarities on structural correlation with optoelectronic property of Zn2SnO4 nanostructured thin films |
| title_full | Effect of precursor molarities on structural correlation with optoelectronic property of Zn2SnO4 nanostructured thin films |
| title_fullStr | Effect of precursor molarities on structural correlation with optoelectronic property of Zn2SnO4 nanostructured thin films |
| title_full_unstemmed | Effect of precursor molarities on structural correlation with optoelectronic property of Zn2SnO4 nanostructured thin films |
| title_short | Effect of precursor molarities on structural correlation with optoelectronic property of Zn2SnO4 nanostructured thin films |
| title_sort | effect of precursor molarities on structural correlation with optoelectronic property of zn2sno4 nanostructured thin films |
| topic | Transparent conducting oxides (TCOs) Zn2SnO4 system Sol-gel processing Structural characterization and optoelectronic properties |
| url | http://www.sciencedirect.com/science/article/pii/S2667022425000246 |
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