Copper halide-based semiconductor materials. Adsorption properties
The adsorption of hydrogen, acetone, and isopropyl alcohol on solid solutions and binary components of the CuBr-CuI system in wide temperature and pressure ranges using the quartz crystal microbalance method has been studied. The ion-radical (relating to hydrogen) and donor-acceptor (relating...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education
2019-06-01
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| Series: | Омский научный вестник |
| Subjects: | |
| Online Access: | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2019/3%20(165)/61-65%20%D0%9A%D0%B8%D1%80%D0%BE%D0%B2%D1%81%D0%BA%D0%B0%D1%8F%20%D0%98.%20%D0%90.,%20%D0%9D%D0%BE%D0%B2%D0%B3%D0%BE%D1%80%D0%BE%D0%B4%D1%86%D0%B5%D0%B2%D0%B0%20%D0%9B.%20%D0%92.,%20%D0%A1%D1%83%D1%80%D0%BE%D0%B2%D0%BE%D0%B9%20%D0%AD.%20%D0%9F.%20%D0%B8%20%D0%B4%D1%80..pdf |
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| Summary: | The adsorption of hydrogen, acetone, and isopropyl
alcohol on solid solutions and binary components of the
CuBr-CuI system in wide temperature and pressure ranges
using the quartz crystal microbalance method has been
studied.
The ion-radical (relating to hydrogen) and donor-acceptor
(relating to acetone, isopropyl alcohol) adsorption mechanisms
with the participation of coordination-unsaturated atoms
(mainly copper atoms) and structural defects as active sites
have been established.
With the change in the composition of the components of the
CuBr-CuI system, both smooth and extreme (with regard to
acetone, isopropyl alcohol) changes in the adsorption values
are observed. The influence of the mechanism of occurrence
of hole conductivity of CuBr-CuI system components on
the nature of the concentration dependence of adsorption is
shown.
Recommendations on the use of the most active component
of the CuBr-CuI system relating to hydrogen as a material for
the manufacture of relevant sensors have been given. |
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| ISSN: | 1813-8225 2541-7541 |