Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures

Characterization of Silicon Carbide Low-Voltage n/p-Channel MOSFETs at High Temperatures

SiC-based n-channel and p-channel MOSFETs fabricated by Fraunhofer IISB SiC CMOS technology are characterized from room temperature up to 300°C. The behaviors of these low voltage devices including the short-channel effect (SCE), p-type ohmic contact with high resistivity, and the low cha...

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Bibliographic Details
Main Authors: Hui Wang, Pengyu Lai, Affan Abbasi, Md Maksudul Hossain, Asif Faruque, H. Alan Mantooth, Zhong Chen
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Silicon carbide
CMOS
high temperature
TCAD
channel mobility
SiC/SiO₂ interface
Online Access:https://ieeexplore.ieee.org/document/10769415/
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