Ultra-low reverse leakage NiOx/β-Ga2O3 heterojunction diode achieving breakdown voltage >3 kV with plasma etch field-termination

Ultra-low reverse leakage NiOx/β-Ga2O3 heterojunction diode achieving breakdown voltage >3 kV with plasma etch field-termination

This work reports the fabrication and characterization of a NiOx/β-Ga2O3 heterojunction diode (HJD) that uses a metallic nickel (Ni) target to deposit NiOx layers via reactive RF magnetron sputtering and lift-off processing with >3 kV breakdown voltage, ultra-low reverse current leakage under hig...

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Bibliographic Details
Main Authors:	Yizheng Liu, Saurav Roy, Carl Peterson, Arkka Bhattacharyya, Sriram Krishnamoorthy
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2025-01-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/5.0251069
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