A review of GaN RF devices and power amplifiers for 5G communication applications

A review of GaN RF devices and power amplifiers for 5G communication applications

In the emerging 5G and beyond 5G (B5G) era, the spotlight is sharply focused on the power amplifier, a critical component with stringent specification requirements that dictates the performance of the transmitter. The gallium nitride (GaN) device, with its superior inherent properties, is surfacing...

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Bibliographic Details
Main Authors: Hao Lu, Meng Zhang, Ling Yang, Bin Hou, Rafael Perez Martinez, Minhan Mi, Jiale Du, Longge Deng, Mei Wu, Srabanti Chowdhury, Xiaohua Ma, Yue Hao
Format: Article
Language:English
Published: KeAi Communications Co. Ltd. 2025-01-01
Series:Fundamental Research
Subjects:
5G
Gallium nitride
High frequency
High linearity
GaN-on-Si HEMTs
Online Access:http://www.sciencedirect.com/science/article/pii/S2667325823003023
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