A Comparison Between GaAs Mesfet and Si NMOS ESD Behaviour
Work is in hand at Loughborough University to investigate and compare the ESD sensitivity of GaAs D-MESFETs and unprotected enhancement mode NMOS structures.
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
1987-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/1987/96107 |
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