High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer
We present high quality GaAs epilayers that grow on virtual substrate with 100 nm Ge buffer layers. The thin Ge buffer layers were modulated by hydrogen flow rate from 60 to 90 sccm to improve crystal quality by electron cyclotron resonance chemical vapor deposition (ECR-CVD) at low growth temperatu...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2016-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2016/7218310 |
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| _version_ | 1832551751549452288 |
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| author | Wei-Cheng Kuo Hung-Chi Hsieh Wu Chih-Hung Huang Wen-Hsiang Chien-Chieh Lee Jenq-Yang Chang |
| author_facet | Wei-Cheng Kuo Hung-Chi Hsieh Wu Chih-Hung Huang Wen-Hsiang Chien-Chieh Lee Jenq-Yang Chang |
| author_sort | Wei-Cheng Kuo |
| collection | DOAJ |
| description | We present high quality GaAs epilayers that grow on virtual substrate with 100 nm Ge buffer layers. The thin Ge buffer layers were modulated by hydrogen flow rate from 60 to 90 sccm to improve crystal quality by electron cyclotron resonance chemical vapor deposition (ECR-CVD) at low growth temperature (180°C). The GaAs and Ge epilayers quality was verified by X-ray diffraction (XRD) and spectroscopy ellipsometry (SE). The full width at half maximum (FWHM) of the Ge and GaAs epilayers in XRD is 406 arcsec and 220 arcsec, respectively. In addition, the GaAs/Ge/Si interface is observed by transmission electron microscopy (TEM) to demonstrate the epitaxial growth. The defects at GaAs/Ge interface are localized within a few nanometers. It is clearly showed that the dislocation is well suppressed. The quality of the Ge buffer layer is the key of III–V/Si tandem cell. Therefore, the high quality GaAs epilayers that grow on virtual substrate with 100 nm Ge buffer layers is suitable to develop the low cost and high efficiency III–V/Si tandem solar cells. |
| format | Article |
| id | doaj-art-96bd5f98bffc493e9a258f54a394e2af |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2016-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-96bd5f98bffc493e9a258f54a394e2af2025-02-03T06:00:42ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2016-01-01201610.1155/2016/72183107218310High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer LayerWei-Cheng Kuo0Hung-Chi Hsieh1Wu Chih-Hung2Huang Wen-Hsiang3Chien-Chieh Lee4Jenq-Yang Chang5Institute of Materials Science and Engineering, National Central University, Taoyuan, TaiwanInstitute of Materials Science and Engineering, National Central University, Taoyuan, TaiwanInstitute of Nuclear Energy Research, Taoyuan, TaiwanInstitute of Nuclear Energy Research, Taoyuan, TaiwanOptical Science Center, National Central University, Taoyuan, TaiwanDepartment of Optics and Photonics, National Central University, Taoyuan, TaiwanWe present high quality GaAs epilayers that grow on virtual substrate with 100 nm Ge buffer layers. The thin Ge buffer layers were modulated by hydrogen flow rate from 60 to 90 sccm to improve crystal quality by electron cyclotron resonance chemical vapor deposition (ECR-CVD) at low growth temperature (180°C). The GaAs and Ge epilayers quality was verified by X-ray diffraction (XRD) and spectroscopy ellipsometry (SE). The full width at half maximum (FWHM) of the Ge and GaAs epilayers in XRD is 406 arcsec and 220 arcsec, respectively. In addition, the GaAs/Ge/Si interface is observed by transmission electron microscopy (TEM) to demonstrate the epitaxial growth. The defects at GaAs/Ge interface are localized within a few nanometers. It is clearly showed that the dislocation is well suppressed. The quality of the Ge buffer layer is the key of III–V/Si tandem cell. Therefore, the high quality GaAs epilayers that grow on virtual substrate with 100 nm Ge buffer layers is suitable to develop the low cost and high efficiency III–V/Si tandem solar cells.http://dx.doi.org/10.1155/2016/7218310 |
| spellingShingle | Wei-Cheng Kuo Hung-Chi Hsieh Wu Chih-Hung Huang Wen-Hsiang Chien-Chieh Lee Jenq-Yang Chang High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer International Journal of Photoenergy |
| title | High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer |
| title_full | High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer |
| title_fullStr | High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer |
| title_full_unstemmed | High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer |
| title_short | High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer |
| title_sort | high quality gaas epilayers grown on si substrate using 100 nm ge buffer layer |
| url | http://dx.doi.org/10.1155/2016/7218310 |
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