Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations
The device performance of indium zinc oxide (IZO) thin-film transistors (TFTs) is optimized through process optimizations. By jointly adjusting the annealing condition, the channel thickness and the sputtering atmosphere, the roughness and oxygen vacancies (Vos) are precisely regulated. The optimize...
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| Format: | Article |
| Language: | English |
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IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10690260/ |
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| author | Mingjun Zhang Jinyang Huang Zihan Wang Paramasivam Balasubramanian Yan Yan Ye Zhou Su-Ting Han Lei Lu Meng Zhang |
| author_facet | Mingjun Zhang Jinyang Huang Zihan Wang Paramasivam Balasubramanian Yan Yan Ye Zhou Su-Ting Han Lei Lu Meng Zhang |
| author_sort | Mingjun Zhang |
| collection | DOAJ |
| description | The device performance of indium zinc oxide (IZO) thin-film transistors (TFTs) is optimized through process optimizations. By jointly adjusting the annealing condition, the channel thickness and the sputtering atmosphere, the roughness and oxygen vacancies (Vos) are precisely regulated. The optimized IZO TFTs can achieve the highest field effect mobility of ~71.8 cm2/Vs with a threshold voltage of ~-0.6 V. Reliability of IZO TFTs under positive/negative bias stress is also examined. The interface quality and the Vo are two key factors influencing the device performance and reliability, confirmed by X-ray photoelectron spectroscopy and atomic force microscopy analysis. |
| format | Article |
| id | doaj-art-95cbf52164184723bf58373a42958282 |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-95cbf52164184723bf58373a429582822025-01-29T00:00:35ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-011286887410.1109/JEDS.2024.346695610690260Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process OptimizationsMingjun Zhang0Jinyang Huang1Zihan Wang2https://orcid.org/0009-0001-1034-5040Paramasivam Balasubramanian3https://orcid.org/0000-0003-4144-6167Yan Yan4https://orcid.org/0000-0001-5404-5026Ye Zhou5https://orcid.org/0000-0002-0273-007XSu-Ting Han6Lei Lu7https://orcid.org/0000-0001-5275-2181Meng Zhang8https://orcid.org/0000-0002-9302-4057Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, ChinaInstitute of Microscale Optoelectronics, Shenzhen University, Shenzhen, ChinaInstitute of Microscale Optoelectronics, Shenzhen University, Shenzhen, ChinaState Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen, ChinaState Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen, ChinaInstitute for Advanced Study, Shenzhen University, Shenzhen, ChinaDepartment of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hong Kong, ChinaSchool of Electronic and Computer Engineering, Shenzhen Graduate School, Peking University, Shenzhen, ChinaState Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen, ChinaThe device performance of indium zinc oxide (IZO) thin-film transistors (TFTs) is optimized through process optimizations. By jointly adjusting the annealing condition, the channel thickness and the sputtering atmosphere, the roughness and oxygen vacancies (Vos) are precisely regulated. The optimized IZO TFTs can achieve the highest field effect mobility of ~71.8 cm2/Vs with a threshold voltage of ~-0.6 V. Reliability of IZO TFTs under positive/negative bias stress is also examined. The interface quality and the Vo are two key factors influencing the device performance and reliability, confirmed by X-ray photoelectron spectroscopy and atomic force microscopy analysis.https://ieeexplore.ieee.org/document/10690260/InZnOthin-film transistorsmagnetron sputteringprocess optimization |
| spellingShingle | Mingjun Zhang Jinyang Huang Zihan Wang Paramasivam Balasubramanian Yan Yan Ye Zhou Su-Ting Han Lei Lu Meng Zhang Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations IEEE Journal of the Electron Devices Society InZnO thin-film transistors magnetron sputtering process optimization |
| title | Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations |
| title_full | Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations |
| title_fullStr | Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations |
| title_full_unstemmed | Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations |
| title_short | Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations |
| title_sort | performance enhancement of indium zinc oxide thin film transistors through process optimizations |
| topic | InZnO thin-film transistors magnetron sputtering process optimization |
| url | https://ieeexplore.ieee.org/document/10690260/ |
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