Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations

Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations

The device performance of indium zinc oxide (IZO) thin-film transistors (TFTs) is optimized through process optimizations. By jointly adjusting the annealing condition, the channel thickness and the sputtering atmosphere, the roughness and oxygen vacancies (Vos) are precisely regulated. The optimize...

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Bibliographic Details
Main Authors: Mingjun Zhang, Jinyang Huang, Zihan Wang, Paramasivam Balasubramanian, Yan Yan, Ye Zhou, Su-Ting Han, Lei Lu, Meng Zhang
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
InZnO
thin-film transistors
magnetron sputtering
process optimization
Online Access:https://ieeexplore.ieee.org/document/10690260/
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