Barrier-Free Carrier Injection in 2D WSe<sub>2</sub>-MoSe<sub>2</sub> Heterostructures via Fermi-Level Depinning

Barrier-Free Carrier Injection in 2D WSe<sub>2</sub>-MoSe<sub>2</sub> Heterostructures via Fermi-Level Depinning

Fermi-level pinning (FLP) at metal–semiconductor interfaces remains a key obstacle to achieving low-resistance contacts in two-dimensional (2D) transition metal dichalcogenide (TMDC)-based heterostructures. Here, we present a first-principles study of Schottky barrier formation in WSe<sub>2<...

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Bibliographic Details
Main Authors: Tian-Jun Dai, Xiang Xiao, Zhong-Yuan Fan, Zi-Yan Zhang, Yi Zhou, Yong-Chi Xu, Jian Sun, Xue-Fei Liu
Format: Article
Language:English
Published: MDPI AG 2025-07-01
Series:Nanomaterials
Subjects:
WSe<sub>2</sub>-MoSe<sub>2</sub> heterostructure
Fermi-level pinning
Schottky barrier height
buffer layer
carrier injection efficiency
Online Access:https://www.mdpi.com/2079-4991/15/13/1035
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