Non Quasi-Static Model of DG Junctionless FETs
In this paper an analytical non-quasi-static (NQS) model for long-channel symmetric double-gate junctionless field-effect transistors (JLFETs) operating in depletion mode is proposed for the first time. The model addresses the limitations of existing DC and AC models by incorporating time-dependent...
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| Format: | Article |
| Language: | English |
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IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10722036/ |
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| author | Mohammad Bavir Abdollah Abbasi Ali Asghar Orouji Farzan Jazaeri Jean-Michel Sallese |
| author_facet | Mohammad Bavir Abdollah Abbasi Ali Asghar Orouji Farzan Jazaeri Jean-Michel Sallese |
| author_sort | Mohammad Bavir |
| collection | DOAJ |
| description | In this paper an analytical non-quasi-static (NQS) model for long-channel symmetric double-gate junctionless field-effect transistors (JLFETs) operating in depletion mode is proposed for the first time. The model addresses the limitations of existing DC and AC models by incorporating time-dependent current continuity equations which are essentials to predict JLFETs behavior at high frequencies. Leveraging charge-based equations, the NQS model captures the delay between current and applied potentials arising beyond the quasi-static regime. Analytical solutions for small-signal perturbations allow the calculation of key transistor small signal parameters such as the gate transadmittance. The model’s validity is tested against TCAD simulations for various device parameters, including doping concentration and channel thickness. Good agreement between the model and TCAD simulations is observed across a wide frequency range, up to highly non-static transport conditions. This work lays the foundation for a comprehensive RF model of JLFETs for high-frequency applications. |
| format | Article |
| id | doaj-art-9574715b98b946b9851ad0a4a394be3b |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-9574715b98b946b9851ad0a4a394be3b2025-01-28T00:00:43ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-011297498010.1109/JEDS.2024.348329910722036Non Quasi-Static Model of DG Junctionless FETsMohammad Bavir0https://orcid.org/0000-0002-1395-8336Abdollah Abbasi1https://orcid.org/0000-0001-6490-8745Ali Asghar Orouji2https://orcid.org/0000-0002-8664-6069Farzan Jazaeri3https://orcid.org/0000-0001-9649-3572Jean-Michel Sallese4https://orcid.org/0000-0003-2109-909XDepartment of Electrical and Computer Engineering, Semnan University, Semnan, IranDepartment of Electrical and Computer Engineering, Semnan University, Semnan, IranDepartment of Electrical and Computer Engineering, Semnan University, Semnan, IranElectron Device Modeling and Technology Laboratory, École Polytechnique Fédérale de Lausanne, Lausanne, SwitzerlandElectron Device Modeling and Technology Laboratory, École Polytechnique Fédérale de Lausanne, Lausanne, SwitzerlandIn this paper an analytical non-quasi-static (NQS) model for long-channel symmetric double-gate junctionless field-effect transistors (JLFETs) operating in depletion mode is proposed for the first time. The model addresses the limitations of existing DC and AC models by incorporating time-dependent current continuity equations which are essentials to predict JLFETs behavior at high frequencies. Leveraging charge-based equations, the NQS model captures the delay between current and applied potentials arising beyond the quasi-static regime. Analytical solutions for small-signal perturbations allow the calculation of key transistor small signal parameters such as the gate transadmittance. The model’s validity is tested against TCAD simulations for various device parameters, including doping concentration and channel thickness. Good agreement between the model and TCAD simulations is observed across a wide frequency range, up to highly non-static transport conditions. This work lays the foundation for a comprehensive RF model of JLFETs for high-frequency applications.https://ieeexplore.ieee.org/document/10722036/Double-gate field-effect transistorsjunctionless FETsnon-quasi static modelcharge-based |
| spellingShingle | Mohammad Bavir Abdollah Abbasi Ali Asghar Orouji Farzan Jazaeri Jean-Michel Sallese Non Quasi-Static Model of DG Junctionless FETs IEEE Journal of the Electron Devices Society Double-gate field-effect transistors junctionless FETs non-quasi static model charge-based |
| title | Non Quasi-Static Model of DG Junctionless FETs |
| title_full | Non Quasi-Static Model of DG Junctionless FETs |
| title_fullStr | Non Quasi-Static Model of DG Junctionless FETs |
| title_full_unstemmed | Non Quasi-Static Model of DG Junctionless FETs |
| title_short | Non Quasi-Static Model of DG Junctionless FETs |
| title_sort | non quasi static model of dg junctionless fets |
| topic | Double-gate field-effect transistors junctionless FETs non-quasi static model charge-based |
| url | https://ieeexplore.ieee.org/document/10722036/ |
| work_keys_str_mv | AT mohammadbavir nonquasistaticmodelofdgjunctionlessfets AT abdollahabbasi nonquasistaticmodelofdgjunctionlessfets AT aliasgharorouji nonquasistaticmodelofdgjunctionlessfets AT farzanjazaeri nonquasistaticmodelofdgjunctionlessfets AT jeanmichelsallese nonquasistaticmodelofdgjunctionlessfets |