Numerical Simulation and Mathematical Modeling of 3D DG SOI MOSFET with the Influence of Biasing with Back Gate
Design consideration of a fully depleted SOI (Silicon-On-Insulator) MOSFET device by three dimensional mathematical modeling is presented in this paper. To the best of our knowledge, when our device is fabricated in nanometer regime, the threshold voltage changes due to various effects. Back gate vo...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2017-10-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua:8080/download/numbers/2017/5/articles/Proof_JNEP_05002.pdf |
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