The analysis of carrier transport mechanism at the interface of BZOPET-GR Schottky contact
Through the hydrothermal technique, we successfully deposited boron (B)-doped zinc oxide nanorods (ZnO NRs) onto a polyethylene terephthalate (PET)/graphene (GR) flexible substrate, creating a B-ZnO/PET/GR Schottky contact. The ZnO NRs exhibited a well-defined hexagonal structure with a lattice cons...
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| Format: | Article |
| Language: | English |
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IOP Publishing
2025-01-01
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| Series: | Materials Research Express |
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| Online Access: | https://doi.org/10.1088/2053-1591/ada0aa |
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| author | Jianhua Zhang Yapeng Li Jiqiang Jia Zhaoyu Luo |
| author_facet | Jianhua Zhang Yapeng Li Jiqiang Jia Zhaoyu Luo |
| author_sort | Jianhua Zhang |
| collection | DOAJ |
| description | Through the hydrothermal technique, we successfully deposited boron (B)-doped zinc oxide nanorods (ZnO NRs) onto a polyethylene terephthalate (PET)/graphene (GR) flexible substrate, creating a B-ZnO/PET/GR Schottky contact. The ZnO NRs exhibited a well-defined hexagonal structure with a lattice constant size of approximately 0.502 nm, as evidenced by characterization results. X-ray Photoelectron Spectroscopy (XPS) analysis revealed a reduction in oxygen vacancies with increasing B ion doping. The current–voltage (I-V) characteristics of the Schottky contacts were systematically investigated over a temperature range of 160–300 K. As the temperature increased, the barrier height exhibited an upward trend, while the ideality factor decreased. This behavior was ascribed to barrier inhomogeneity at the Schottky contact interface. Employing a single Gauss distribution function for barrier height, we verified and elucidated this phenomenon, contributing to a comprehensive understanding of the observed temperature-dependent electrical properties. |
| format | Article |
| id | doaj-art-8f9fcf56e6d0452a91a2c2c650889e82 |
| institution | Kabale University |
| issn | 2053-1591 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj-art-8f9fcf56e6d0452a91a2c2c650889e822025-01-28T16:00:18ZengIOP PublishingMaterials Research Express2053-15912025-01-0112101590310.1088/2053-1591/ada0aaThe analysis of carrier transport mechanism at the interface of BZOPET-GR Schottky contactJianhua Zhang0https://orcid.org/0000-0002-5370-957XYapeng Li1https://orcid.org/0000-0002-3438-5741Jiqiang Jia2Zhaoyu Luo3School of Materials Science and Engineering, Shaanxi University of Technology , Hanzhong 723000, People’s Republic of China; School of Materials Science and Engineering, Xi’an University of Technology , Xi’an 710048, People’s Republic of ChinaSchool of Materials Science and Engineering, Shaanxi University of Technology , Hanzhong 723000, People’s Republic of ChinaSchool of Materials Science and Engineering, Xi’an University of Technology , Xi’an 710048, People’s Republic of ChinaSchool of Materials Science and Engineering, Shaanxi University of Technology , Hanzhong 723000, People’s Republic of ChinaThrough the hydrothermal technique, we successfully deposited boron (B)-doped zinc oxide nanorods (ZnO NRs) onto a polyethylene terephthalate (PET)/graphene (GR) flexible substrate, creating a B-ZnO/PET/GR Schottky contact. The ZnO NRs exhibited a well-defined hexagonal structure with a lattice constant size of approximately 0.502 nm, as evidenced by characterization results. X-ray Photoelectron Spectroscopy (XPS) analysis revealed a reduction in oxygen vacancies with increasing B ion doping. The current–voltage (I-V) characteristics of the Schottky contacts were systematically investigated over a temperature range of 160–300 K. As the temperature increased, the barrier height exhibited an upward trend, while the ideality factor decreased. This behavior was ascribed to barrier inhomogeneity at the Schottky contact interface. Employing a single Gauss distribution function for barrier height, we verified and elucidated this phenomenon, contributing to a comprehensive understanding of the observed temperature-dependent electrical properties.https://doi.org/10.1088/2053-1591/ada0aaZnOSchottky contactelectrical propertiesion dopingbarrier height |
| spellingShingle | Jianhua Zhang Yapeng Li Jiqiang Jia Zhaoyu Luo The analysis of carrier transport mechanism at the interface of BZOPET-GR Schottky contact Materials Research Express ZnO Schottky contact electrical properties ion doping barrier height |
| title | The analysis of carrier transport mechanism at the interface of BZOPET-GR Schottky contact |
| title_full | The analysis of carrier transport mechanism at the interface of BZOPET-GR Schottky contact |
| title_fullStr | The analysis of carrier transport mechanism at the interface of BZOPET-GR Schottky contact |
| title_full_unstemmed | The analysis of carrier transport mechanism at the interface of BZOPET-GR Schottky contact |
| title_short | The analysis of carrier transport mechanism at the interface of BZOPET-GR Schottky contact |
| title_sort | analysis of carrier transport mechanism at the interface of bzopet gr schottky contact |
| topic | ZnO Schottky contact electrical properties ion doping barrier height |
| url | https://doi.org/10.1088/2053-1591/ada0aa |
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