Achieving N/P Doping of MoS₂ Through ZnO Interface Engineering in Heterostructures for Semiconductor Devices

Achieving N/P Doping of MoS₂ Through ZnO Interface Engineering in Heterostructures for Semiconductor Devices

The aim of this study is to explore the electronic properties of the MoS2/ZnO heterostructure and their potential applications in semiconductor devices. We analyzed the impact of N/P doping on electronic properties of ZnO structures with different terminations using the Density Functional Theory-Non...

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Bibliographic Details
Main Authors: Lijun Xu, Guohui Zhan, Kun Luo, Yukun Shi, Pengcong Mu, Yan Liu, Qinzhi Xu, Jiangtao Liu, Zhenhua Wu
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
MoS₂
ZnO
DFT-NEGF
interface charge distribution
N/P doping
Online Access:https://ieeexplore.ieee.org/document/11106822/
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