GeTe/Sb2Te3 Super‐Lattices: Impact of Atomic Structure on the RESET Current of Phase‐Change Memory Devices
Abstract Phase change memories (PCMs) are at the heart of modern memory technology, offering multi‐level storage, fast read/write operations, and non‐volatility, bridging the gap between volatile DRAM and non‐volatile Flash. The reversible transition between amorphous and crystalline states of phase...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-02-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400290 |
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