Improved Charge Carrier Transport Across Grain Boundaries in N‐type PbSe by Dopant Segregation

Improved Charge Carrier Transport Across Grain Boundaries in N‐type PbSe by Dopant Segregation

Doping is an important and routine method to tune the properties of semiconductors. Dopants accumulated at grain boundaries (GBs) can exert a profound influence on microstructures and transport properties of heat and charge. To unravel the effect of dopant accumulation at GBs on the scattering of el...

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Bibliographic Details
Main Authors: Huaide Zhang, Minghao Shen, Christian Stenz, Christian Teichrib, Riga Wu, Lisa Schäfer, Nan Lin, Yiming Zhou, Chongjian Zhou, Oana Cojocaru‐Mirédin, Matthias Wuttig, Yuan Yu
Format: Article
Language:English
Published: Wiley-VCH 2025-03-01
Series:Small Science
Subjects:
charge carrier scattering
dopant segregations
grain boundary
lattice plainification
metavalent bonding
Online Access:https://doi.org/10.1002/smsc.202300299
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