Nanoclustering in Silicon Induced by Oxygen Ions Implanted
We report about the nanoclustering induced by oxygen‐implantation in silicon. A tandem‐type accelerator, with a maximum acceleration voltage of 3 MV, equipped with a sputtering ion source suitable for the production of high current ion beams by sputtering of solid cathodes has be...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2011-11-01
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| Series: | Nanomaterials and Nanotechnology |
| Subjects: | |
| Online Access: | http://www.intechopen.com/journals/nanomaterials_and_nanotechnology/nanoclustering_in_silicon_induced_by_oxygen_ions_implanted |
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