Hall element with two Schottky barrier contacts Al-p-Si
Way of the fabrication and results of studies of electrical and photoelectric characteristics of the Hall element with two current contacts and two Hall potential contacts on one surface of the silicon plate and two contacts Al-p-Si with the barrier Schottky on inverse surface of the plate, are...
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| Main Author: | |
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| Format: | Article |
| Language: | English |
| Published: |
Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education
2020-09-01
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| Series: | Омский научный вестник |
| Subjects: | |
| Online Access: | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2020/4%20(172)/60-65%20%D0%91%D1%83%D1%80%D0%BB%D0%B0%D0%BA%D0%BE%D0%B2%20%D0%A0.%20%D0%91..pdf |
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| Summary: | Way of the fabrication and results of studies of electrical and
photoelectric characteristics of the Hall element with two current
contacts and two Hall potential contacts on one surface of the
silicon plate and two contacts Al-p-Si with the barrier Schottky on
inverse surface of the plate, are considered. Explored Hall element has a simple technology of the fabrication and possesses extended
functional possibilities. |
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| ISSN: | 1813-8225 2541-7541 |