Design and Analysis of High-K Wrapped GaN Gate All Around FET as High-Frequency Device in IOT Systems

Design and Analysis of High-K Wrapped GaN Gate All Around FET as High-Frequency Device in IOT Systems

Gallium Nitride (GaN)-based Gate Stack (GS) Gate-All-Around Field Effect Transistors (GAA FETs) are promising candidates for next-generation energy-efficient electronics due to their exceptional material properties, such as high electron mobility, wide bandgap, and superior thermal stability. This s...

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Bibliographic Details
Main Authors: Sneha Singh, Rudra Sankar Dhar, Amit Banerjee, Vinay Gupta
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Access
Subjects:
High-k wrapping
underlap
high-frequency device
GAA FET
IOT systems
Online Access:https://ieeexplore.ieee.org/document/10977951/
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