Design and Analysis of High-K Wrapped GaN Gate All Around FET as High-Frequency Device in IOT Systems
Gallium Nitride (GaN)-based Gate Stack (GS) Gate-All-Around Field Effect Transistors (GAA FETs) are promising candidates for next-generation energy-efficient electronics due to their exceptional material properties, such as high electron mobility, wide bandgap, and superior thermal stability. This s...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10977951/ |
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