AlGaN/GaN Heterostructure Schottky Barrier Diodes with Graded Barrier Layer
The AlGaN/GaN Schottky barrier diodes (SBDs) working as high-power mixer and multiplier show great potential in millimeter wave (MMW) field owing to their high breakdown voltage. Nevertheless, its further application is severely limited by large reverse leakage current (Jr) since the two-dimensional...
Saved in:
| Main Authors: | , , , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2022-01-01
|
| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2022/5885992 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832562542589771776 |
|---|---|
| author | Honghui Liu Zhiwen Liang Chaokun Yan Yuebo Liu Fengge Wang Yanyan Xu Junyu Shen Zhengwen Xiao Zhisheng Wu Yang Liu Qi Wang Xinqiang Wang Baijun Zhang |
| author_facet | Honghui Liu Zhiwen Liang Chaokun Yan Yuebo Liu Fengge Wang Yanyan Xu Junyu Shen Zhengwen Xiao Zhisheng Wu Yang Liu Qi Wang Xinqiang Wang Baijun Zhang |
| author_sort | Honghui Liu |
| collection | DOAJ |
| description | The AlGaN/GaN Schottky barrier diodes (SBDs) working as high-power mixer and multiplier show great potential in millimeter wave (MMW) field owing to their high breakdown voltage. Nevertheless, its further application is severely limited by large reverse leakage current (Jr) since the two-dimensional electron gas (2DEG) channel is hard to be pinched off at low voltage. To address this limitation, a graded AlGaN/GaN heterostructure is introduced to extend the 2DEG channel into a quasi-three-dimensional electron slab. By comparing the fixed Al composition AlGaN/GaN SBD, Jr of the graded AlGaN/GaN SBD is significantly reduced due to the extension of channel carriers, confirming the effective Jr suppression effect of this structure. Furthermore, on this basis, a recessed anode structure is utilized to expect a smaller Jr. The results indicated that the graded AlGaN/GaN SBDs with air-bridge structure have achieved a pretty low Jr value (1.6 × 10−13 A at -15 V), and its cutoff frequency is as high as 60.6 GHz. It is expected that such SBDs with low Jr have significant advantages in future applications. |
| format | Article |
| id | doaj-art-8a7540ba4a134154bbf1eea43d91018f |
| institution | Kabale University |
| issn | 1687-8124 |
| language | English |
| publishDate | 2022-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-8a7540ba4a134154bbf1eea43d91018f2025-02-03T01:22:25ZengWileyAdvances in Condensed Matter Physics1687-81242022-01-01202210.1155/2022/5885992AlGaN/GaN Heterostructure Schottky Barrier Diodes with Graded Barrier LayerHonghui Liu0Zhiwen Liang1Chaokun Yan2Yuebo Liu3Fengge Wang4Yanyan Xu5Junyu Shen6Zhengwen Xiao7Zhisheng Wu8Yang Liu9Qi Wang10Xinqiang Wang11Baijun Zhang12State Key Laboratory of Optoelectronic Materials and TechnologiesState Key Laboratory of Optoelectronic Materials and TechnologiesState Key Laboratory of Optoelectronic Materials and TechnologiesScience and Technology on Reliability Physics and Application of Electronic Component LaboratoryState Key Laboratory of Optoelectronic Materials and TechnologiesState Key Laboratory of Optoelectronic Materials and TechnologiesState Key Laboratory of Optoelectronic Materials and TechnologiesState Key Laboratory of Optoelectronic Materials and TechnologiesState Key Laboratory of Optoelectronic Materials and TechnologiesState Key Laboratory of Optoelectronic Materials and TechnologiesDongguan Institue of Opto-ElectronicsDongguan Institue of Opto-ElectronicsState Key Laboratory of Optoelectronic Materials and TechnologiesThe AlGaN/GaN Schottky barrier diodes (SBDs) working as high-power mixer and multiplier show great potential in millimeter wave (MMW) field owing to their high breakdown voltage. Nevertheless, its further application is severely limited by large reverse leakage current (Jr) since the two-dimensional electron gas (2DEG) channel is hard to be pinched off at low voltage. To address this limitation, a graded AlGaN/GaN heterostructure is introduced to extend the 2DEG channel into a quasi-three-dimensional electron slab. By comparing the fixed Al composition AlGaN/GaN SBD, Jr of the graded AlGaN/GaN SBD is significantly reduced due to the extension of channel carriers, confirming the effective Jr suppression effect of this structure. Furthermore, on this basis, a recessed anode structure is utilized to expect a smaller Jr. The results indicated that the graded AlGaN/GaN SBDs with air-bridge structure have achieved a pretty low Jr value (1.6 × 10−13 A at -15 V), and its cutoff frequency is as high as 60.6 GHz. It is expected that such SBDs with low Jr have significant advantages in future applications.http://dx.doi.org/10.1155/2022/5885992 |
| spellingShingle | Honghui Liu Zhiwen Liang Chaokun Yan Yuebo Liu Fengge Wang Yanyan Xu Junyu Shen Zhengwen Xiao Zhisheng Wu Yang Liu Qi Wang Xinqiang Wang Baijun Zhang AlGaN/GaN Heterostructure Schottky Barrier Diodes with Graded Barrier Layer Advances in Condensed Matter Physics |
| title | AlGaN/GaN Heterostructure Schottky Barrier Diodes with Graded Barrier Layer |
| title_full | AlGaN/GaN Heterostructure Schottky Barrier Diodes with Graded Barrier Layer |
| title_fullStr | AlGaN/GaN Heterostructure Schottky Barrier Diodes with Graded Barrier Layer |
| title_full_unstemmed | AlGaN/GaN Heterostructure Schottky Barrier Diodes with Graded Barrier Layer |
| title_short | AlGaN/GaN Heterostructure Schottky Barrier Diodes with Graded Barrier Layer |
| title_sort | algan gan heterostructure schottky barrier diodes with graded barrier layer |
| url | http://dx.doi.org/10.1155/2022/5885992 |
| work_keys_str_mv | AT honghuiliu alganganheterostructureschottkybarrierdiodeswithgradedbarrierlayer AT zhiwenliang alganganheterostructureschottkybarrierdiodeswithgradedbarrierlayer AT chaokunyan alganganheterostructureschottkybarrierdiodeswithgradedbarrierlayer AT yueboliu alganganheterostructureschottkybarrierdiodeswithgradedbarrierlayer AT fenggewang alganganheterostructureschottkybarrierdiodeswithgradedbarrierlayer AT yanyanxu alganganheterostructureschottkybarrierdiodeswithgradedbarrierlayer AT junyushen alganganheterostructureschottkybarrierdiodeswithgradedbarrierlayer AT zhengwenxiao alganganheterostructureschottkybarrierdiodeswithgradedbarrierlayer AT zhishengwu alganganheterostructureschottkybarrierdiodeswithgradedbarrierlayer AT yangliu alganganheterostructureschottkybarrierdiodeswithgradedbarrierlayer AT qiwang alganganheterostructureschottkybarrierdiodeswithgradedbarrierlayer AT xinqiangwang alganganheterostructureschottkybarrierdiodeswithgradedbarrierlayer AT baijunzhang alganganheterostructureschottkybarrierdiodeswithgradedbarrierlayer |