Hall‐effect sensors based on AlGaN/GaN heterojunctions on Si substrates for a wide temperature range
Abstract The authors report experimental investigations on Hall sensors based on AlGaN/GaN heterojunctions grown on silicon 111 (Si 111) substrates. Realisation of two‐dimensional electron gas‐based Hall sensors on Si substrates can have the advantages of low cost and integrability with complementar...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-11-01
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| Series: | IET Circuits, Devices and Systems |
| Online Access: | https://doi.org/10.1049/cds2.12067 |
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