Improved performance of lateral β-Ga2O3 Schottky barrier diodes by nitrogen thermal annealing
We report the growth of (2¯01)β-Ga2O3 epilayers on sapphire substrates using metalorganic chemical vapor deposition (MOCVD) and the fabrication of lateral Schottky barrier diodes (SBDs). Ti/Al/Ni/Au layers with respective thicknesses of 20/300/40/50 nm were deposited as the ohmic electrodes, follow...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-06-01
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| Series: | Applied Surface Science Advances |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2666523925000522 |
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