Improvement of Mosfet Characteristics

By inclusion of a semi-dielectric layer, a novel MOSFET Structure, the T-MOSFET, and its integrated circuit version are presented. Both for the enhancement mode and the depletion mode, equivalent circuit models are developed. Also, the high frequency behaviour is explained by a model and the behavio...

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Bibliographic Details
Main Author: Ranbir Singh
Format: Article
Language:English
Published: Wiley 1990-01-01
Series:Active and Passive Electronic Components
Online Access:http://dx.doi.org/10.1155/1990/78629
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