Improved Crystalline Quality of AlN by Epitaxial Lateral Overgrowth Using Two-Phase Growth Method for Deep-Ultraviolet Stimulated Emission

Improved Crystalline Quality of AlN by Epitaxial Lateral Overgrowth Using Two-Phase Growth Method for Deep-Ultraviolet Stimulated Emission

We report on the maskless epitaxial lateral overgrowth (ELOG) of the AlN layer on trench-patterned AlN/sapphire templates by metal-organic chemical vapor deposition (MOCVD). With a two-phase growth of different V/III ratio at a relatively low growth temperature of 1250 °C, up t...

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Bibliographic Details
Main Authors: Xiang Chen, Jianchang Yan, Yun Zhang, Yingdong Tian, Yanan Guo, Shuo Zhang, Tongbo Wei, Junxi Wang, Jinmin Li
Format: Article
Language:English
Published: IEEE 2016-01-01
Series:IEEE Photonics Journal
Subjects:
AlN
epitaxial lateral overgrowth (ELOG)
stimulated emission
deep ultraviolet laser diode (DUV LD).
Online Access:https://ieeexplore.ieee.org/document/7582371/
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