Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress
Degradation phenomena featured with positive shift of the on-state transfer curve are reported for the amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) under negative bias illumination stress (NBIS). Such a positive shift is absent when the gate bias or the illumination is independently appli...
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IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10499976/ |
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| author | Dongsheng Hong Bing Zhang Dongli Zhang Mingxiang Wang Rongxin Wang |
| author_facet | Dongsheng Hong Bing Zhang Dongli Zhang Mingxiang Wang Rongxin Wang |
| author_sort | Dongsheng Hong |
| collection | DOAJ |
| description | Degradation phenomena featured with positive shift of the on-state transfer curve are reported for the amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) under negative bias illumination stress (NBIS). Such a positive shift is absent when the gate bias or the illumination is independently applied. With the assistance of TCAD simulation, the positive shift of the transfer curve is attributed to the generation of acceptor-like trap states, which is proposed to be due to oxygen interstitials produced as a consequence of electron generation by the illumination, acceleration under the effect of negative gate bias, and breaking weakly bonded oxygen. The proposed degradation mechanism is consistent with the low frequency noise characteristics and the degradation behavior under bipolar gate bias stress of the TFTs after NBIS. The whole degradation phenomena for the a-IGZO TFT under the NBIS are then consistently explained. |
| format | Article |
| id | doaj-art-8805708bfb204cdda005a35836e7a788 |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-8805708bfb204cdda005a35836e7a7882025-01-28T00:00:28ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-011233133710.1109/JEDS.2024.338872710499976Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination StressDongsheng Hong0Bing Zhang1Dongli Zhang2https://orcid.org/0000-0002-0556-5532Mingxiang Wang3https://orcid.org/0000-0002-6099-3230Rongxin Wang4School of Electronic and Information Engineering, Soochow University, Suzhou, ChinaSchool of Electronic and Information Engineering, Soochow University, Suzhou, ChinaSchool of Electronic and Information Engineering, Soochow University, Suzhou, ChinaSchool of Electronic and Information Engineering, Soochow University, Suzhou, ChinaChinese Academy of Sciences, Suzhou Institute of Nano-Tech and Nano-Bionics, Suzhou, ChinaDegradation phenomena featured with positive shift of the on-state transfer curve are reported for the amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) under negative bias illumination stress (NBIS). Such a positive shift is absent when the gate bias or the illumination is independently applied. With the assistance of TCAD simulation, the positive shift of the transfer curve is attributed to the generation of acceptor-like trap states, which is proposed to be due to oxygen interstitials produced as a consequence of electron generation by the illumination, acceleration under the effect of negative gate bias, and breaking weakly bonded oxygen. The proposed degradation mechanism is consistent with the low frequency noise characteristics and the degradation behavior under bipolar gate bias stress of the TFTs after NBIS. The whole degradation phenomena for the a-IGZO TFT under the NBIS are then consistently explained.https://ieeexplore.ieee.org/document/10499976/illumination stressacceptor-like trap states |
| spellingShingle | Dongsheng Hong Bing Zhang Dongli Zhang Mingxiang Wang Rongxin Wang Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress IEEE Journal of the Electron Devices Society illumination stress acceptor-like trap states |
| title | Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress |
| title_full | Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress |
| title_fullStr | Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress |
| title_full_unstemmed | Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress |
| title_short | Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress |
| title_sort | increased threshold voltage of amorphous ingazno thin film transistors after negative bias illumination stress |
| topic | illumination stress acceptor-like trap states |
| url | https://ieeexplore.ieee.org/document/10499976/ |
| work_keys_str_mv | AT dongshenghong increasedthresholdvoltageofamorphousingaznothinfilmtransistorsafternegativebiasilluminationstress AT bingzhang increasedthresholdvoltageofamorphousingaznothinfilmtransistorsafternegativebiasilluminationstress AT donglizhang increasedthresholdvoltageofamorphousingaznothinfilmtransistorsafternegativebiasilluminationstress AT mingxiangwang increasedthresholdvoltageofamorphousingaznothinfilmtransistorsafternegativebiasilluminationstress AT rongxinwang increasedthresholdvoltageofamorphousingaznothinfilmtransistorsafternegativebiasilluminationstress |