Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress
Degradation phenomena featured with positive shift of the on-state transfer curve are reported for the amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) under negative bias illumination stress (NBIS). Such a positive shift is absent when the gate bias or the illumination is independently appli...
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Main Authors: | , , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2024-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/10499976/ |
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