Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress

Degradation phenomena featured with positive shift of the on-state transfer curve are reported for the amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) under negative bias illumination stress (NBIS). Such a positive shift is absent when the gate bias or the illumination is independently appli...

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Bibliographic Details
Main Authors: Dongsheng Hong, Bing Zhang, Dongli Zhang, Mingxiang Wang, Rongxin Wang
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Online Access:https://ieeexplore.ieee.org/document/10499976/
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