Hong, D., Zhang, B., Zhang, D., Wang, M., & Wang, R. Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress. IEEE.
Chicago Style (17th ed.) CitationHong, Dongsheng, Bing Zhang, Dongli Zhang, Mingxiang Wang, and Rongxin Wang. Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress. IEEE.
MLA (9th ed.) CitationHong, Dongsheng, et al. Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress. IEEE.
Warning: These citations may not always be 100% accurate.