The Role of Dopant Concentration on Conductivity and Mobility of CdTe Thin Films
Films of CdTe pure and doped with various atomic percentages of Al and Sb (0.5, 1.5 & 2.5) were prepared, and their electrical properties were investigated. The films were prepared by thermal evaporation on glass substrates at two substrate temperatures (Ts=RT & 423 K). The results showed th...
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| Format: | Article |
| Language: | English |
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Wiley
2011-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2011/910967 |
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| author | Ala J. Al-Douri F. Y. Al-Shakily Abdalla A. Alnajjar Maysoon F. A. Alias |
| author_facet | Ala J. Al-Douri F. Y. Al-Shakily Abdalla A. Alnajjar Maysoon F. A. Alias |
| author_sort | Ala J. Al-Douri |
| collection | DOAJ |
| description | Films of CdTe pure and doped with various atomic percentages of Al and Sb (0.5, 1.5 & 2.5) were prepared, and their electrical properties were investigated. The films were prepared by thermal evaporation on glass substrates at two substrate temperatures (Ts=RT & 423 K). The results showed that the conduction phenomena of all the investigated CdTe thin films on glass substrates are caused by two distinct mechanisms. Room temperature DC conductivity increases by a factor of four for undoped CdTe thin films as Ts increases and by 1-2 orders of magnitude with increasing dopant percentage of Al and Sb. In general, films doped with Sb are more efficient than Al-doped films. The activation energy (Ea2) decreases with increasing Ts and dopant percentage for both Al and Sb. Undoped CdTe films deposited at RT are p-type convert to n-type with increasing Ts and upon doping with Al at more than 0.5%. The carrier concentration decreases as Ts increases while it increases with increasing dopant percentage. Hall mobility decreases more than three times as Al increases whereas it increases about one order of magnitude with increasing Sb percentage in CdTe thin films deposited at 423 K and RT, respectively. |
| format | Article |
| id | doaj-art-86f3dc34e51b48649d7ef9a103372283 |
| institution | Kabale University |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2011-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-86f3dc34e51b48649d7ef9a1033722832025-02-03T01:03:38ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242011-01-01201110.1155/2011/910967910967The Role of Dopant Concentration on Conductivity and Mobility of CdTe Thin FilmsAla J. Al-Douri0F. Y. Al-Shakily1Abdalla A. Alnajjar2Maysoon F. A. Alias3Applied Physics Department, Sciences College, University of Sharjah, P.O. Box 27272, Sharjah, UAEPhysics Department, Education College, Al-Mustansirya University, Baghdad, IraqApplied Physics Department, Sciences College, University of Sharjah, P.O. Box 27272, Sharjah, UAEPhysics Department, Science College, University of Baghdad, P.O. Box 47162, Jadiriyah, Baghdad, IraqFilms of CdTe pure and doped with various atomic percentages of Al and Sb (0.5, 1.5 & 2.5) were prepared, and their electrical properties were investigated. The films were prepared by thermal evaporation on glass substrates at two substrate temperatures (Ts=RT & 423 K). The results showed that the conduction phenomena of all the investigated CdTe thin films on glass substrates are caused by two distinct mechanisms. Room temperature DC conductivity increases by a factor of four for undoped CdTe thin films as Ts increases and by 1-2 orders of magnitude with increasing dopant percentage of Al and Sb. In general, films doped with Sb are more efficient than Al-doped films. The activation energy (Ea2) decreases with increasing Ts and dopant percentage for both Al and Sb. Undoped CdTe films deposited at RT are p-type convert to n-type with increasing Ts and upon doping with Al at more than 0.5%. The carrier concentration decreases as Ts increases while it increases with increasing dopant percentage. Hall mobility decreases more than three times as Al increases whereas it increases about one order of magnitude with increasing Sb percentage in CdTe thin films deposited at 423 K and RT, respectively.http://dx.doi.org/10.1155/2011/910967 |
| spellingShingle | Ala J. Al-Douri F. Y. Al-Shakily Abdalla A. Alnajjar Maysoon F. A. Alias The Role of Dopant Concentration on Conductivity and Mobility of CdTe Thin Films Advances in Condensed Matter Physics |
| title | The Role of Dopant Concentration on Conductivity and Mobility of CdTe Thin Films |
| title_full | The Role of Dopant Concentration on Conductivity and Mobility of CdTe Thin Films |
| title_fullStr | The Role of Dopant Concentration on Conductivity and Mobility of CdTe Thin Films |
| title_full_unstemmed | The Role of Dopant Concentration on Conductivity and Mobility of CdTe Thin Films |
| title_short | The Role of Dopant Concentration on Conductivity and Mobility of CdTe Thin Films |
| title_sort | role of dopant concentration on conductivity and mobility of cdte thin films |
| url | http://dx.doi.org/10.1155/2011/910967 |
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