Influence of impurities and structural defects on the properties of CdTe- and CdZnTe-based detectors
The most researched materials for uncooled semiconductor detectors of ionizing radiation are CdTe:Cl and Cd0.9Zn0.1Te, which allow to obtain detectors with high values of resistivity ρ and electron mobility. In the process of producing detector materials, the background impurities and defects can be...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2022-06-01
|
| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | https://tkea.com.ua/index.php/journal/article/view/60 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Be the first to leave a comment!